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원자제어 저차원 전자계 연구단
원자제어 저차원 전자계 연구단
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Role of Spin Hall Effect in the Topological Side Surface Conduction

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Title
Role of Spin Hall Effect in the Topological Side Surface Conduction
Author(s)
Jekwan Lee; Sangwan Sim; Soohyun Park; Chihun In; Seungwan Cho; Seungmin Lee; Soonyoung Cha; Sooun Lee; Hoil Kim; Jehyun Kim; Wooyoung Shim; Jun Sung Kim; Dohun Kim; Hyunyong Choi
Publication Date
2018-08
Journal
ACS PHOTONICS, v.5, no.8, pp.3347 - 3352
Publisher
AMER CHEMICAL SOC
Abstract
The nature of spin transport in the bulk and side surface of three-dimensional topological insulator thin film geometry is a relatively unexplored subject, compared to the extensively studied top and bottom surface states. Here we employ time- and space-resolved helicity-dependent photocurrent measurements to investigate the effect of optically excited bulk carriers on the spin-polarized topological side surface conduction. Time-resolved femtosecond double-pulse excitation reveals that the spin current toward the side surface arises from the bulk-originated spin Hall effect (SHE), whose microscopic origin is governed by an Elliott–Yafet-type spin relaxation mechanism via an extrinsic side jump process. Bias- and temperature-dependent measurements further confirm that the spin scattering in Bi2Se3 has multiple sources including impurity and electron–phonon scattering. The SHE-assisted side surface spin conduction shows an exceptionally high charge-to-spin conversion efficiency of 35% at 77 K, which may offer new spintronic applications of topological insulators such as spin–orbit torque or spin-flip controlled light-emitting devices. © 2018 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/5780
ISSN
2330-4022
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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