Planar and van der Waals heterostructures for vertical tunnelling single electron transistors

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Title
Planar and van der Waals heterostructures for vertical tunnelling single electron transistors
Author(s)
Gwangwoo Kim; Sung-Soo Kim; Jonghyuk Jeon; Seong In Yoon; Seokmo Hong; Young Jin Cho; Abhishek Misra; Servet Ozdemir; Jun Yin; Davit Ghazaryan; Mathew Holwill; Artem Mishchenko; Daria V. Andreeva; Yong-Jin Kim; Hu Young Jeong; A-Rang Jang; Hyun-Jong Chung; Andre K. Geim; Kostya S. Novoselov; Byeong-Hyeok Sohn; Hyeon Suk Shin
Publication Date
2019-01
Journal
NATURE COMMUNICATIONS, v.10, no., pp.230 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Despite a rich choice of two-dimensional materials, which exists these days, hetero-structures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices. © The Author(s) 2019.
URI
https://pr.ibs.re.kr/handle/8788114/5755
ISSN
2041-1723
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
Files in This Item:
4. s41467-018-08227-1.pdfDownload

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