Atomic-scale symmetry breaking for out-of-plane piezoelectricity in two-dimensional transition metal dichalcogenides
DC Field | Value | Language |
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dc.contributor.author | Seunghun Kang | - |
dc.contributor.author | Sera Kim | - |
dc.contributor.author | Sera Jeon | - |
dc.contributor.author | Woo-Sung Jang | - |
dc.contributor.author | Daehee Seol | - |
dc.contributor.author | Young-Min Kim | - |
dc.contributor.author | Jaekwang Lee | - |
dc.contributor.author | Heejun Yang | - |
dc.contributor.author | Yunseok Kim | - |
dc.date.available | 2019-05-02T08:07:13Z | - |
dc.date.created | 2019-01-28 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.issn | 2211-2855 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/5642 | - |
dc.description.abstract | It is known that only in-plane piezoelectricity exists in pristine two dimensional (2D) transition metal dichalcogenides (TMDs). In this study, we demonstrate the creation of strong out-of-plane piezoelectricity in semiconducting 2H-MoTe2 flakes by an artificial atomic-scale symmetry breaking. The atomic-scale symmetry breaking associated with flexoelectricity was realized through Te vacancy formation by a simple thermal annealing of the 2D TMDs. The strong out-of-plane piezoelectricity was experimentally measured and confirmed by theoretical calculations. This strategy of atomic-scale symmetry modulation for out-of-plane piezoelectricity can be easily applied to a broader class of 2D TMD materials that have not been used for applications with out-of-plane piezoelectricity. Accordingly, it can stimulate the expansion of practical energy device applications with 2D TMD materials. © 2019 Elsevier Ltd. | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | Elsevier BV | - |
dc.subject | Flexoelectricity | - |
dc.subject | Out-of-plane piezoelectricity | - |
dc.subject | Piezoresponse force microscopy | - |
dc.subject | Te vacancy | - |
dc.subject | Transition metal dichalcogenides | - |
dc.title | Atomic-scale symmetry breaking for out-of-plane piezoelectricity in two-dimensional transition metal dichalcogenides | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000461433600007 | - |
dc.identifier.scopusid | 2-s2.0-85059850173 | - |
dc.identifier.rimsid | 66753 | - |
dc.contributor.affiliatedAuthor | Young-Min Kim | - |
dc.identifier.doi | 10.1016/j.nanoen.2019.01.025 | - |
dc.identifier.bibliographicCitation | NANO ENERGY, v.58, pp.57 - 62 | - |
dc.citation.title | NANO ENERGY | - |
dc.citation.volume | 58 | - |
dc.citation.startPage | 57 | - |
dc.citation.endPage | 62 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | LAYER MOS2 | - |
dc.subject.keywordAuthor | Transition metal dichalcogenides | - |
dc.subject.keywordAuthor | Te vacancy | - |
dc.subject.keywordAuthor | Flexoelectricity | - |
dc.subject.keywordAuthor | Out-of-plane piezoelectricity | - |
dc.subject.keywordAuthor | Piezoresponse force microscopy | - |