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나노구조물리연구단
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Atomic-scale symmetry breaking for out-of-plane piezoelectricity in two-dimensional transition metal dichalcogenides

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dc.contributor.authorSeunghun Kang-
dc.contributor.authorSera Kim-
dc.contributor.authorSera Jeon-
dc.contributor.authorWoo-Sung Jang-
dc.contributor.authorDaehee Seol-
dc.contributor.authorYoung-Min Kim-
dc.contributor.authorJaekwang Lee-
dc.contributor.authorHeejun Yang-
dc.contributor.authorYunseok Kim-
dc.date.available2019-05-02T08:07:13Z-
dc.date.created2019-01-28-
dc.date.issued2019-04-
dc.identifier.issn2211-2855-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/5642-
dc.description.abstractIt is known that only in-plane piezoelectricity exists in pristine two dimensional (2D) transition metal dichalcogenides (TMDs). In this study, we demonstrate the creation of strong out-of-plane piezoelectricity in semiconducting 2H-MoTe2 flakes by an artificial atomic-scale symmetry breaking. The atomic-scale symmetry breaking associated with flexoelectricity was realized through Te vacancy formation by a simple thermal annealing of the 2D TMDs. The strong out-of-plane piezoelectricity was experimentally measured and confirmed by theoretical calculations. This strategy of atomic-scale symmetry modulation for out-of-plane piezoelectricity can be easily applied to a broader class of 2D TMD materials that have not been used for applications with out-of-plane piezoelectricity. Accordingly, it can stimulate the expansion of practical energy device applications with 2D TMD materials. © 2019 Elsevier Ltd.-
dc.description.uri1-
dc.language영어-
dc.publisherElsevier BV-
dc.subjectFlexoelectricity-
dc.subjectOut-of-plane piezoelectricity-
dc.subjectPiezoresponse force microscopy-
dc.subjectTe vacancy-
dc.subjectTransition metal dichalcogenides-
dc.titleAtomic-scale symmetry breaking for out-of-plane piezoelectricity in two-dimensional transition metal dichalcogenides-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000461433600007-
dc.identifier.scopusid2-s2.0-85059850173-
dc.identifier.rimsid66753-
dc.contributor.affiliatedAuthorYoung-Min Kim-
dc.identifier.doi10.1016/j.nanoen.2019.01.025-
dc.identifier.bibliographicCitationNANO ENERGY, v.58, pp.57 - 62-
dc.citation.titleNANO ENERGY-
dc.citation.volume58-
dc.citation.startPage57-
dc.citation.endPage62-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusLAYER MOS2-
dc.subject.keywordAuthorTransition metal dichalcogenides-
dc.subject.keywordAuthorTe vacancy-
dc.subject.keywordAuthorFlexoelectricity-
dc.subject.keywordAuthorOut-of-plane piezoelectricity-
dc.subject.keywordAuthorPiezoresponse force microscopy-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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