FeIn2S4 Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field-Effect Transistors
DC Field | Value | Language |
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dc.contributor.author | Hyunjung Kim | - |
dc.contributor.author | Anand P. Tiwari | - |
dc.contributor.author | Eunhee Hwang | - |
dc.contributor.author | Yunhee Cho | - |
dc.contributor.author | Heemin Hwang | - |
dc.contributor.author | Sora Bak | - |
dc.contributor.author | Yeseul Hong | - |
dc.contributor.author | Hyoyoung Lee | - |
dc.date.available | 2019-02-12T10:56:47Z | - |
dc.date.created | 2018-08-17 | - |
dc.date.issued | 2018-07 | - |
dc.identifier.issn | 2198-3844 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/5550 | - |
dc.description.abstract | An ambipolar channel layer material is required to realize the potential benefits of ambipolar complementary metal-oxide-semiconductor field-effect transistors, namely their compact and efficient nature, reduced reverse power dissipation, and possible applicability to highly integrated circuits. Here, a ternary metal chalcogenide nanocrystal material, FeIn2S4, is introduced as a solution-processable ambipolar channel material for field-effect transistors (FETs). The highest occupied molecular orbital and the lowest unoccupied molecular orbital of the FeIn2S4 nanocrystals are determined to be -5.2 and -3.75 eV, respectively, based upon cyclic voltammetry, X-ray photoelectron spectroscopy, and diffraction reflectance spectroscopy analyses. An ambipolar FeIn2S4 FET is successfully fabricated with Au electrodes (E-F = -5.1 eV), showing both electron mobility (14.96 cm(2) V-1 s(-1)) and hole mobility (9.15 cm(2) V-1 s(-1)) in a single channel layer, with an on/off current ratio of 10(5). This suggests that FeIn2S4 nanocrystals may be a promising alternative semiconducting material for next-generation integrated circuit development | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | WILEY | - |
dc.subject | ambipolar transistors | - |
dc.subject | iron indium sulfide | - |
dc.subject | nanocrystal field-effect transistors | - |
dc.title | FeIn2S4 Nanocrystals: A Ternary Metal Chalcogenide Material for Ambipolar Field-Effect Transistors | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000439842100006 | - |
dc.identifier.scopusid | 2-s2.0-85044423791 | - |
dc.identifier.rimsid | 64395 | - |
dc.contributor.affiliatedAuthor | Hyunjung Kim | - |
dc.contributor.affiliatedAuthor | Anand P. Tiwari | - |
dc.contributor.affiliatedAuthor | Eunhee Hwang | - |
dc.contributor.affiliatedAuthor | Yunhee Cho | - |
dc.contributor.affiliatedAuthor | Heemin Hwang | - |
dc.contributor.affiliatedAuthor | Sora Bak | - |
dc.contributor.affiliatedAuthor | Yeseul Hong | - |
dc.contributor.affiliatedAuthor | Hyoyoung Lee | - |
dc.identifier.doi | 10.1002/advs.201800068 | - |
dc.identifier.bibliographicCitation | ADVANCED SCIENCE, v.5, no.7, pp.1800068 | - |
dc.citation.title | ADVANCED SCIENCE | - |
dc.citation.volume | 5 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1800068 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | COLLOIDAL NANOCRYSTALS | - |
dc.subject.keywordPlus | CYCLIC VOLTAMMETRY | - |
dc.subject.keywordPlus | CDSE NANOCRYSTALS | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | CHARGE-TRANSPORT | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | PROSPECTS | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordAuthor | ambipolar transistors | - |
dc.subject.keywordAuthor | iron indium sulfide | - |
dc.subject.keywordAuthor | nanocrystal field-effect transistors | - |