Electronics and Optoelectronics Based on Two-Dimensional Materials
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Quoc An Vu | - |
dc.contributor.author | Woo Jong Yu | - |
dc.date.available | 2019-02-12T10:54:50Z | - |
dc.date.created | 2018-08-17 | - |
dc.date.issued | 2018-07 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/5543 | - |
dc.description.abstract | Recently, with the emergence of two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and hexagonal boron nitride, various studies on electronic and optoelectronic devices based on them have been carried out. In this review article, we discuss the representative studies on electronic and optoelectronic devices based on 2D materials and their heterostructures. Accordingly, we briefly overview the unique properties of typical 2D materials and their van der Waals heterostructures and thereafter present an in-depth review of their advantages for electronics and optoelectronics. The opportunities and challenges presented by them for future electronics and optoelectronics are discussed | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | 2D materials | - |
dc.subject | Van der Waals heterostructure | - |
dc.subject | Electronic | - |
dc.subject | Optoelectronic devices | - |
dc.title | Electronics and Optoelectronics Based on Two-Dimensional Materials | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000438475400001 | - |
dc.identifier.scopusid | 2-s2.0-85049744292 | - |
dc.identifier.rimsid | 64401 | - |
dc.contributor.affiliatedAuthor | Quoc An Vu | - |
dc.identifier.doi | 10.3938/jkps.73.1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.73, no.1, pp.1 - 15 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 73 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 15 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordPlus | FLOATING-GATE MEMORY | - |
dc.subject.keywordPlus | WAFER-SCALE GROWTH | - |
dc.subject.keywordPlus | GRAIN-BOUNDARIES | - |
dc.subject.keywordPlus | DER-WAALS HETEROSTRUCTURES | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject.keywordPlus | SINGLE-LAYER MOS2 | - |
dc.subject.keywordPlus | P-N-JUNCTION | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE OPTOELECTRONICS | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | Van der Waals heterostructure | - |
dc.subject.keywordAuthor | Electronic | - |
dc.subject.keywordAuthor | Optoelectronic devices | - |