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Electronics and Optoelectronics Based on Two-Dimensional Materials

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dc.contributor.authorQuoc An Vu-
dc.contributor.authorWoo Jong Yu-
dc.date.available2019-02-12T10:54:50Z-
dc.date.created2018-08-17-
dc.date.issued2018-07-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/5543-
dc.description.abstractRecently, with the emergence of two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and hexagonal boron nitride, various studies on electronic and optoelectronic devices based on them have been carried out. In this review article, we discuss the representative studies on electronic and optoelectronic devices based on 2D materials and their heterostructures. Accordingly, we briefly overview the unique properties of typical 2D materials and their van der Waals heterostructures and thereafter present an in-depth review of their advantages for electronics and optoelectronics. The opportunities and challenges presented by them for future electronics and optoelectronics are discussed-
dc.description.uri1-
dc.language영어-
dc.publisherKOREAN PHYSICAL SOC-
dc.subject2D materials-
dc.subjectVan der Waals heterostructure-
dc.subjectElectronic-
dc.subjectOptoelectronic devices-
dc.titleElectronics and Optoelectronics Based on Two-Dimensional Materials-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000438475400001-
dc.identifier.scopusid2-s2.0-85049744292-
dc.identifier.rimsid64401-
dc.contributor.affiliatedAuthorQuoc An Vu-
dc.identifier.doi10.3938/jkps.73.1-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.73, no.1, pp.1 - 15-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume73-
dc.citation.number1-
dc.citation.startPage1-
dc.citation.endPage15-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.subject.keywordPlusFLOATING-GATE MEMORY-
dc.subject.keywordPlusWAFER-SCALE GROWTH-
dc.subject.keywordPlusGRAIN-BOUNDARIES-
dc.subject.keywordPlusDER-WAALS HETEROSTRUCTURES-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusTRANSITION-METAL DICHALCOGENIDES-
dc.subject.keywordPlusSINGLE-LAYER MOS2-
dc.subject.keywordPlusP-N-JUNCTION-
dc.subject.keywordPlusHIGH-PERFORMANCE OPTOELECTRONICS-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordAuthor2D materials-
dc.subject.keywordAuthorVan der Waals heterostructure-
dc.subject.keywordAuthorElectronic-
dc.subject.keywordAuthorOptoelectronic devices-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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