BROWSE

Related Scientist

cces's photo.

cces
강상관계물질연구단
more info

ITEM VIEW & DOWNLOAD

Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

Cited 11 time in webofscience Cited 0 time in scopus
843 Viewed 197 Downloaded
Title
Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field
Author(s)
Sung Min Park; Wang, B; Saikat Das; Seung Chul Chae; Jin-Seok Chung; Jong-Gul Yoon; Long-Qing Chen; Sang Mo Yang; Tae Won Noh
Publication Date
2018-03
Journal
NATURE NANOTECHNOLOGY, v.13, no.5, pp.366 - 370
Publisher
NATURE PUBLISHING GROUP
Abstract
Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient(1) that enables mechanical manipulation of polarization without applying an electrical bias(2,3). Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip(3,4). However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71 degrees ferroelastic switching or 180 degrees ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage
URI
https://pr.ibs.re.kr/handle/8788114/5458
DOI
10.1038/s41565-018-0083-5
ISSN
1748-3387
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
s41565-018-0083-5.pdfDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse