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강상관계 물질 연구단
강상관계 물질 연구단
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Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

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Title
Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field
Author(s)
Sung Min Park; Wang, B; Saikat Das; Seung Chul Chae; Jin-Seok Chung; Jong-Gul Yoon; Long-Qing Chen; Sang Mo Yang; Tae Won Noh
Publication Date
2018-03
Journal
NATURE NANOTECHNOLOGY, v.13, no.5, pp.366 - 370
Publisher
NATURE PUBLISHING GROUP
Abstract
Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient(1) that enables mechanical manipulation of polarization without applying an electrical bias(2,3). Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip(3,4). However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71 degrees ferroelastic switching or 180 degrees ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage
URI
https://pr.ibs.re.kr/handle/8788114/5458
ISSN
1748-3387
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
s41565-018-0083-5.pdfDownload

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