Synthesis of high-quality monolayer graphene by low-power plasma

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Title
Synthesis of high-quality monolayer graphene by low-power plasma
Author(s)
Hyo-Ki Hong; Na Yeon Kim; Aram Yoon; Suk Woo Lee; Jungmin Park; Jung-Woo Yoo; Zonghoon Lee
Publication Date
2019-01
Journal
CURRENT APPLIED PHYSICS, v.19, no.1, pp.44 - 49
Publisher
ELSEVIER SCIENCE BV
Abstract
The growth of high-quality graphene on copper substrates has been intensively investigated using chemical vapor deposition (CVD). It, however, has been considered that the growth mechanism is different when graphene is synthesized using a plasma CVD. In this study, we demonstrate a dual role of hydrogen for the graphene growth on copper using an inductively coupled plasma (ICP) CVD. Hydrogen activates surface-bound carbon for the growth of high-quality monolayer graphene. In contrast, the role of an etchant is to manipulate the distribution of the graphene grains, which significantly depends on the plasma power. Atomic-resolution transmission electron microscopy study enables the mapping of graphene grains, which uncovers the distribution of grains and the number of graphene layers depending on the plasma power. In addition, the variation of electronic properties of the synthesized graphene relies on the plasma power © 2018 Korean Physical Society.
URI
https://pr.ibs.re.kr/handle/8788114/5339
ISSN
1567-1739
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
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