Exfoliation of Transition Metal Dichalcogenides by a High-Power Femtosecond Laser
DC Field | Value | Language |
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dc.contributor.author | Sung-Jin An | - |
dc.contributor.author | Yong Hwan Kim | - |
dc.contributor.author | Chanwoo Lee | - |
dc.contributor.author | DaeYoung Park | - |
dc.contributor.author | Mun Seok Jeong | - |
dc.date.available | 2019-01-03T05:33:22Z | - |
dc.date.created | 2018-10-15 | - |
dc.date.issued | 2018-08 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/5225 | - |
dc.description.abstract | Thin layer two-dimensional (2-D) transition metal dichalcogenide (TMD) materials have distinctive optoelectronic properties. Therefore, several methods including mechanical exfoliation, chemical vapor deposition, and liquid-phase exfoliation have been attempted to obtain uniform TMDs. However, such methods do not easily produce high-quality few-layer TMDs with high speed. Here, we report the successful fabrication of few-layer TMD materials by femtosecond laser irradiation. It shows that TMD samples can be exfoliated from bulk to similar to 3 layers. This method is much faster and simpler than other exfoliation methods. The size and number of the layers were confirmed by atomic force microscopy, scanning electron microscopy, Raman spectroscopy, and photoluminescence experiments. It is expected to be used for the mass production of thin 2-D TMD materials.© The Author(s) 2018 | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Exfoliation of Transition Metal Dichalcogenides by a High-Power Femtosecond Laser | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000442917500029 | - |
dc.identifier.scopusid | 2-s2.0-85052397724 | - |
dc.identifier.rimsid | 65415 | - |
dc.contributor.affiliatedAuthor | Sung-Jin An | - |
dc.contributor.affiliatedAuthor | Chanwoo Lee | - |
dc.contributor.affiliatedAuthor | DaeYoung Park | - |
dc.contributor.affiliatedAuthor | Mun Seok Jeong | - |
dc.identifier.doi | 10.1038/s41598-018-31374-w | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.8, pp.12957 | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 8 | - |
dc.citation.startPage | 12957 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | CRYSTALS | - |
dc.subject.keywordPlus | ABLATION | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | WSE2 | - |