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원자제어 저차원 전자계 연구단
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Generation, transport, and detection of valley-locked spin photocurrent in WSe2-graphene–Bi2Se3 heterostructures

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Title
Generation, transport, and detection of valley-locked spin photocurrent in WSe2-graphene–Bi2Se3 heterostructures
Author(s)
Soonyoung Cha; Minji Noh; Jehyun Kim; Jangyup Son; Hyemin Bae; Doeon Lee; Hoil Kim; Jekwan Lee; Ho-Seung Shin; Sangwan Sim; Seunghoon Yang; Sooun Lee; Wooyoung Shim; Chul-Ho Lee; Moon-Ho Jo; Jun Sung Kim; Dohun Kim; Hyunyong Choi
Publication Date
2018-10
Journal
NATURE NANOTECHNOLOGY, v.13, no.10, pp.910 - 914
Publisher
NATURE PUBLISHING GROUP
Abstract
Quantum optoelectronic devices capable of isolating a tar-get degree of freedom (DoF) from other DoFs have allowed for new applications in modern information technology. Many works on solid-state spintronics have focused on methods to disentangle the spin DoF from the charge DoF1, yet many related issues remain unresolved. Although the recent advent of atomically thin transition metal dichalcogenides (TMDs) has enabled the use of valley pseudospin as an alternative DoF2,3, it is nontrivial to separate the spin DoF from the valley DoF since the time-reversal valley DoF is intrinsically locked with the spin DoF4. Here, we demonstrate lateral TMD?밽ra-phene?뱓opological insulator hetero-devices with the possibil-ity of such a DoF-selective measurement. We generate the valley-locked spin DoF via a circular photogalvanic effect in an electric-double-layer WSe2 transistor. The valley-locked spin photocarriers then diffuse in a submicrometre-long gra-phene layer, and the spin DoF is measured separately in the topological insulator via non-local electrical detection using the characteristic spin?뱈omentum locking. Operating at room temperature, our integrated devices exhibit a non-local spin polarization degree of higher than 0.5, providing the potential for coupled opto-spin?뱕alleytronic applications that indepen-dently exploit the valley and spin DoFs.
URI
https://pr.ibs.re.kr/handle/8788114/5116
DOI
10.1038/s41565-018-0195-y
ISSN
1748-3387
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
201810_Nature Nanotechnology_조문호(공동)_Generation, transport and detection of valley-locked spin photocurrent in WSe2–graphene–Bi2Se3 heterostructures.pdfDownload

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