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Transfer-Free, Large-Scale Growth of High-Quality Graphene on Insulating Substrate by Physical Contact of Copper Foil

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Title
Transfer-Free, Large-Scale Growth of High-Quality Graphene on Insulating Substrate by Physical Contact of Copper Foil
Author(s)
Intek Song; Yohwan Park; Hyeyeon Cho; Hee Cheul Choi
Publication Date
2018-11
Journal
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.57, no.47, pp.15374 - 15378
Publisher
WILEY-V C H VERLAG GMBH
Abstract
High-quality, large-area, single-layer graphene was directly grown on top of a quartz substrate by a low-pressure chemical vapor deposition (CVD) process using Cu vapor as a catalyst. In this process, continuous generation and supply of highly concentrated Cu vapor is the key to the growth of large-scale, high-quality graphene. It was achieved by direct physical contact, or ��touch-down,�� of a Cu foil with an underlying sacrificial SiO2/Si substrate, and the target quartz substrate was placed on top of the Cu foil, eventually having a quartz/Cu/SiO2/Si sandwich structure. To establish the reaction mechanism, a test growth was performed without the quartz substrate, which revealed that Cu is diffused through the SiO2 layer of the sacrificial SiO2/Si substrate to form liquid-phase Cu-Si alloy that emits massive Cu vapor. This Cu vapor catalyzes thermal decomposition of supplied CH4 gas. (c) 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinhei
URI
https://pr.ibs.re.kr/handle/8788114/5065
ISSN
1433-7851
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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