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원자제어저차원전자계연구단
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Transfer-Free, Large-Scale Growth of High-Quality Graphene on Insulating Substrate by Physical Contact of Copper Foil

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dc.contributor.authorIntek Song-
dc.contributor.authorYohwan Park-
dc.contributor.authorHyeyeon Cho-
dc.contributor.authorHee Cheul Choi-
dc.date.available2019-01-03T05:30:39Z-
dc.date.created2018-11-22-
dc.date.issued2018-11-
dc.identifier.issn1433-7851-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/5065-
dc.description.abstractHigh-quality, large-area, single-layer graphene was directly grown on top of a quartz substrate by a low-pressure chemical vapor deposition (CVD) process using Cu vapor as a catalyst. In this process, continuous generation and supply of highly concentrated Cu vapor is the key to the growth of large-scale, high-quality graphene. It was achieved by direct physical contact, or ��touch-down,�� of a Cu foil with an underlying sacrificial SiO2/Si substrate, and the target quartz substrate was placed on top of the Cu foil, eventually having a quartz/Cu/SiO2/Si sandwich structure. To establish the reaction mechanism, a test growth was performed without the quartz substrate, which revealed that Cu is diffused through the SiO2 layer of the sacrificial SiO2/Si substrate to form liquid-phase Cu-Si alloy that emits massive Cu vapor. This Cu vapor catalyzes thermal decomposition of supplied CH4 gas. (c) 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinhei-
dc.description.uri1-
dc.language영어-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectalloys-
dc.subjectchemical vapor deposition-
dc.subjectdirect growth-
dc.subjectgraphene-
dc.subjectinsulator substrates-
dc.titleTransfer-Free, Large-Scale Growth of High-Quality Graphene on Insulating Substrate by Physical Contact of Copper Foil-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000453344500010-
dc.identifier.scopusid2-s2.0-85055535710-
dc.identifier.rimsid66117-
dc.contributor.affiliatedAuthorIntek Song-
dc.contributor.affiliatedAuthorYohwan Park-
dc.contributor.affiliatedAuthorHyeyeon Cho-
dc.contributor.affiliatedAuthorHee Cheul Choi-
dc.identifier.doi10.1002/anie.201805923-
dc.identifier.bibliographicCitationANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.57, no.47, pp.15374 - 15378-
dc.citation.titleANGEWANDTE CHEMIE-INTERNATIONAL EDITION-
dc.citation.volume57-
dc.citation.number47-
dc.citation.startPage15374-
dc.citation.endPage15378-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthoralloys-
dc.subject.keywordAuthorchemical vapor deposition-
dc.subject.keywordAuthordirect growth-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthorinsulator substrates-
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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