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CMOS-compatible batch processing of monolayer MoS2 MOSFETs

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dc.contributor.authorKuanchen Xiong-
dc.contributor.authorHyun Kim-
dc.contributor.authorRoderick J Marstell-
dc.contributor.authorAlexander Göritz-
dc.contributor.authorChristian Wipf-
dc.contributor.authorLei Li-
dc.contributor.authorJi-Hoon Park-
dc.contributor.authorXi Luo-
dc.contributor.authorMatthias Wietstruck-
dc.contributor.authorAsher Madjar-
dc.contributor.authorNicholas C Strandwitz-
dc.contributor.authorMehmet Kaynak-
dc.contributor.authorYoung Hee Lee-
dc.contributor.authorJames C M Hwang-
dc.date.available2018-07-18T02:04:03Z-
dc.date.created2018-05-16-
dc.date.issued2018-04-
dc.identifier.issn0022-3727-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/4574-
dc.description.abstractThousands of high-performance 2D metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on wafer-scale chemical vapor deposited MoS2 with fully-CMOS-compatible processes such as photolithography and aluminum metallurgy. The yield was greater than 50% in terms of effective gate control with less-than-10 V threshold voltage, even for MOSFETs having deep-submicron gate length. The large number of fabricated MOSFETs allowed statistics to be gathered and the main yield limiter to be attributed to the weak adhesion between the transferred MoS2 and the substrate. With cut-off frequencies approaching the gigahertz range, the performances of the MOSFETs were comparable to that of state-of-the-art MoS2 MOSFETs, whether the MoS2 was grown by a thin-film process or exfoliated from a bulk crystal © 2018 IOP Publishing Ltd Printed in the UK-
dc.language영어-
dc.publisherIOP PUBLISHING LTD-
dc.subjectchemical vapor deposition-
dc.subjectCMOS process-
dc.subjectsemiconductor device manufacture-
dc.subjectsemiconductor nanostructures-
dc.subjectthin film transistors-
dc.subjectwafer scale integration-
dc.subjectMOSFET-
dc.titleCMOS-compatible batch processing of monolayer MoS2 MOSFETs-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000428053100001-
dc.identifier.scopusid2-s2.0-85044837485-
dc.identifier.rimsid63256ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorHyun Kim-
dc.contributor.affiliatedAuthorJi-Hoon Park-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1088/1361-6463/aab4ba-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICS D-APPLIED PHYSICS, v.51, no.15, pp.15LT02-
dc.relation.isPartOfJOURNAL OF PHYSICS D-APPLIED PHYSICS-
dc.citation.titleJOURNAL OF PHYSICS D-APPLIED PHYSICS-
dc.citation.volume51-
dc.citation.number15-
dc.citation.startPage15LT02-
dc.date.scptcdate2018-10-01-
dc.description.wostc1-
dc.description.scptc1-
dc.description.journalClass1-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorchemical vapor deposition-
dc.subject.keywordAuthorCMOS process-
dc.subject.keywordAuthorsemiconductor device manufacture-
dc.subject.keywordAuthorsemiconductor nanostructures-
dc.subject.keywordAuthorthin film transistors-
dc.subject.keywordAuthorwafer scale integration-
dc.subject.keywordAuthorMOSFET-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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