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Wen Zhao
다차원 탄소재료 연구단
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In situ atomic-scale observation of monolayer graphene growth from SiC

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Title
In situ atomic-scale observation of monolayer graphene growth from SiC
Author(s)
Kaihao Yu; Wen Zhao; Xing Wu; Jianing Zhuang; Xiaohui Hu; Qiubo Zhang; Jun Sun; Tao Xu; Yang Chai; Feng Ding; Litao Sun
Publication Date
2018-05
Journal
NANO RESEARCH, v.11, no.5, pp.2809 - 2820
Publisher
TSINGHUA UNIV PRESS
Abstract
Because of its high compatibility with conventional microfabrication processing technology, epitaxial graphene (EG) grown on SiC shows exceptional promise for graphene-based electronics. However, to date, a detailed understanding of the transformation from three-layer SiC to monolayer graphene is still lacking. Here, we demonstrate the direct atomic-scale observation of EG growth on a SiC (1 (1) over bar 00) surface at 1,000 degrees C by in situ transmission electron microscopy in combination with ab initio molecular dynamics (AIMD) simulations. Our detailed analysis of the growth dynamics of monolayer graphene reveals that three SiC (1 (1) over bar 00) layers decompose successively to form one graphene layer. Sublimation of the first layer causes the formation of carbon clusters containing short chains and hexagonal rings, which can be considered as the nuclei for graphene growth. Decomposition of the second layer results in the appearance of new chains connecting to the as-formed clusters and the formation of a network with large pores. Finally, the carbon atoms released from the third layer lead to the disappearance of the chains and large pores in the network, resulting in a whole graphene layer. Our study presents a clear picture of the epitaxial growth of the monolayer graphene from SiC and provides valuable information forfuture developments in SiC-derived EG technology © Tsinghua University Press and Springer-Verlag GmbH Germany 2017
URI
https://pr.ibs.re.kr/handle/8788114/4500
ISSN
1998-0124
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
Files in This Item:
4. 10.1007_s12274-017-1911-x.pdfDownload

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