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van der Waals Layered Materials: Opportunities and ChallengesHighly Cited Paper

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dc.contributor.authorDinh Loc Duong-
dc.contributor.authorSeok Joon Yun-
dc.contributor.authorYoung Hee Lee-
dc.date.available2018-01-30T00:50:39Z-
dc.date.created2018-01-23-
dc.date.issued2017-12-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/4312-
dc.description.abstractSince graphene became available by a scotch tape technique, a vast class of two-dimensional (2D) van der Waals (vdW) layered materials has been researched intensively. What is more intriguing is that the well-known physics and chemistry of three-dimensional (3D) bulk materials are often irrelevant, revealing exotic phenomena in 2D vdW materials. By further constructing heterostructures of these materials in the planar and vertical directions, which can be easily achieved via simple exfoliation techniques, numerous quantum mechanical devices have been demonstrated for fundamental research and technological applications. It is, therefore, necessary to review the special features in 2D vdW materials and to discuss the remaining issues and challenges. Here, we review the vdW materials library, technology relevance, and specialties of vdW materials covering the vdW interaction, strong Coulomb interaction, layer dependence, dielectric screening engineering, work function modulation, phase engineering, heterostructures, stability, growth issues, and the remaining challenges. © 2017 American Chemical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.subjecttwo-dimensional materials-
dc.subjectvan der Waals interaction-
dc.subjectheterostructures-
dc.subjectCoulomb interaction-
dc.subjectdielectric screening-
dc.subjectphase engineering-
dc.subjectproximity effects-
dc.subjectmulticarrier generation-
dc.subjectcontact resistance-
dc.titlevan der Waals Layered Materials: Opportunities and Challenges-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000418990200006-
dc.identifier.scopusid2-s2.0-85040056236-
dc.identifier.rimsid61982ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorDinh Loc Duong-
dc.contributor.affiliatedAuthorSeok Joon Yun-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1021/acsnano.7b07436-
dc.identifier.bibliographicCitationACS NANO, v.11, no.12, pp.11803 - 11830-
dc.citation.titleACS NANO-
dc.citation.volume11-
dc.citation.number12-
dc.citation.startPage11803-
dc.citation.endPage11830-
dc.date.scptcdate2018-10-01-
dc.description.wostc19-
dc.description.scptc23-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusHEXAGONAL BORON-NITRIDE-
dc.subject.keywordPlusTRANSITION-METAL DICHALCOGENIDES-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusTUNABLE ELECTRONIC-PROPERTIES-
dc.subject.keywordPlus2-DIMENSIONAL Y2C ELECTRIDE-
dc.subject.keywordPlusHYDROGEN EVOLUTION REACTION-
dc.subject.keywordPlusMOLECULAR-BEAM EPITAXY-
dc.subject.keywordPlusP-N-JUNCTION-
dc.subject.keywordPlusBILAYER GRAPHENE-
dc.subject.keywordAuthortwo-dimensional materials-
dc.subject.keywordAuthorvan der Waals interaction-
dc.subject.keywordAuthorheterostructures-
dc.subject.keywordAuthorCoulomb interaction-
dc.subject.keywordAuthordielectric screening-
dc.subject.keywordAuthorphase engineering-
dc.subject.keywordAuthorproximity effects-
dc.subject.keywordAuthormulticarrier generation-
dc.subject.keywordAuthorcontact resistance-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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