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강상관계 물질 연구단
강상관계 물질 연구단
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Graphene analogue in (111)-oriented BaBiO3 bilayer heterostructures for topological electronics

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Title
Graphene analogue in (111)-oriented BaBiO3 bilayer heterostructures for topological electronics
Author(s)
Rokyeon Kim; Jaejun Yu; Hosub Jin
Publication Date
2018-01
Journal
SCIENTIFIC REPORTS, v.8, no.1, pp.1 - 7
Publisher
NATURE PUBLISHING GROUP
Abstract
Topological electronics is a new field that uses topological charges as current-carrying degrees of freedom. For topological electronics applications, systems should host topologically distinct phases to control the topological domain boundary through which the topological charges can flow. Due to their multiple Dirac cones and the π-Berry phase of each Dirac cone, graphene-like electronic structures constitute an ideal platform for topological electronics; graphene can provide various topological phases when incorporated with large spin-orbit coupling and mass-gap tunability via symmetry-breaking. Here, we propose that a (111)-oriented BaBiO3 bilayer (BBL) sandwiched between large-gap perovskite oxides is a promising candidate for topological electronics by realizing a gap-tunable, and consequently a topology-tunable, graphene analogue. Depending on how neighboring perovskite spacers are chosen, the inversion symmetry of the BBL heterostructure can be either conserved or broken, leading to the quantum spin Hall (QSH) and quantum valley Hall (QVH) phases, respectively. BBL sandwiched by ferroelectric compounds enables switching of the QSH and QVH phases and generates the topological domain boundary. Given the abundant order parameters of the sandwiching oxides, the BBL can serve as versatile topological building blocks in oxide heterostructures. © 2018 The Author(s)
URI
http://pr.ibs.re.kr/handle/8788114/4304
ISSN
2045-2322
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
02_s41598-017-19090-3.pdfDownload

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