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다차원 탄소재료 연구단
다차원 탄소재료 연구단
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Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide

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Title
Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide
Author(s)
Seung Min Lee; Jung Hwan Yum; Eric S. Larsen; Woo Chul Lee; Seong Keun Kim; Christopher W. Bielawski; Jungwoo Oh
Publication Date
2017-10
Journal
SCIENTIFIC REPORTS, v.7, no., pp.13205 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications. © The Author(s) 2017
URI
http://pr.ibs.re.kr/handle/8788114/4265
DOI
10.1038/s41598-017-13693-6
ISSN
2045-2322
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
Files in This Item:
4. s41598-017-13693-6.pdfDownload

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