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Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface

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Title
Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface
Author(s)
Jun Hong Park; Atresh Sanne; Yuzheng Guo; Matin Amani; Kehao Zhang; Hema C. P. Movva; Joshua A. Robinson; Ali Javey; John Robertson; Sanjay K. Banerjee; Andrew C. Kummel
Publication Date
2017-10
Journal
SCIENCE ADVANCES, v.3, no.10, pp.e1701661 - e1701666
Publisher
AMER ASSOC ADVANCEMENT SCIENCE
Abstract
Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS2 is investigated as a defect passivation method. A strong negative charge transfer from MoS2 to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the ION/IOFF in back-gated MoS2 transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS2. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex. 2017 © The Authors, some rights reserved
URI
https://pr.ibs.re.kr/handle/8788114/4195
ISSN
2375-2548
Appears in Collections:
Center for Quantum Nanoscience(양자나노과학 연구단) > Journal Papers (저널 논문)
Files in This Item:
2017 Science Advances 3_ e1701661 (2017)..pdfDownload

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