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Electrodynamic properties of the semimetallic Dirac material SrMnBi2: Two-carrier-model analysis

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dc.contributor.authorH. J. Park-
dc.contributor.authorByung Cheol Park-
dc.contributor.authorMin-Cheol Lee-
dc.contributor.authorDawoon Jeong-
dc.contributor.authorJoonbum Park-
dc.contributor.authorJun Sung Kim-
dc.contributor.authorHyo Seok Ji-
dc.contributor.authorJ. H. Shim-
dc.contributor.authorK. W. Kim-
dc.contributor.authorS. J. Moon-
dc.contributor.authorHyeong-Do Kim-
dc.contributor.authorDeok-Yong Cho-
dc.contributor.authorT. W. Noh-
dc.date.available2018-01-05T05:50:57Z-
dc.date.created2017-12-27-
dc.date.issued2017-10-
dc.identifier.issn2469-9950-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/4160-
dc.description.abstractThe electrodynamics of free carriers in the semimetallic Dirac material SrMnB i 2 was investigated using optical spectroscopy and first-principles calculations. Using a two-carrier-model analysis, the total free-carrier response was successfully decomposed into individual contributions from Dirac fermions and non-Dirac free carriers. Possible roles of chiral pseudospin, spin-orbit interaction (SOI), antiferromagnetism, and electron-phonon (e−ph)coupling in the Dirac fermion transport were also addressed. The Dirac fermions possess a low scattering rate of ∼10meV at low temperature and thereby experience coherent transport. However, at high temperatures, we observed that the Dirac fermion transport becomes significantly incoherent, possibly due to strong e−ph interactions. The SOI-induced gap and antiferromagnetism play minor roles in the electrodynamics of the free carriers in SrMnB i2. We also observed a seemingly optical-gap-like feature near 120 meV, which emerges at low temperatures but becomes filled in with increasing temperature. This gap-filling phenomenon is ascribed to phonon-assisted indirect transitions promoted at high temperatures. © 2017 American Physical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER PHYSICAL SOC-
dc.titleElectrodynamic properties of the semimetallic Dirac material SrMnBi2: Two-carrier-model analysis-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000413765500001-
dc.identifier.scopusid2-s2.0-85038611617-
dc.identifier.rimsid61825ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorH. J. Park-
dc.contributor.affiliatedAuthorByung Cheol Park-
dc.contributor.affiliatedAuthorMin-Cheol Lee-
dc.contributor.affiliatedAuthorDawoon Jeong-
dc.contributor.affiliatedAuthorJun Sung Kim-
dc.contributor.affiliatedAuthorHyeong-Do Kim-
dc.contributor.affiliatedAuthorDeok-Yong Cho-
dc.contributor.affiliatedAuthorT. W. Noh-
dc.identifier.doi10.1103/PhysRevB.96.155139-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.96, no.15, pp.155139-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume96-
dc.citation.number15-
dc.citation.startPage155139-
dc.date.scptcdate2018-10-01-
dc.description.scptc0-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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