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나노물질 및 화학반응 연구단
나노물질 및 화학반응 연구단
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Construction and evaluation of an ultrahigh-vacuum-compatible sputter deposition source

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Title
Construction and evaluation of an ultrahigh-vacuum-compatible sputter deposition source
Author(s)
Peter Lackner; Joong II Jake Choi; Ulrike Diebold; Michael Schmid
Publication Date
2017-10
Journal
REVIEW OF SCIENTIFIC INSTRUMENTS, v.88, no.10, pp.103904 -
Publisher
AMER INST PHYSICS
Abstract
A sputter deposition source for the use in ultrahigh vacuum (UHV) is described, and some properties of the source are analyzed. The operating principle is based on the design developed by Mayr et al. [Rev. Sci. Instrum. 84, 094103 (2013)], where electrons emitted from a filament ionize argon gas and the Ar+ ions are accelerated to the target. In contrast to the original design, two grids are used to direct a large fraction of the Ar+ ions to the target, and the source has a housing cooled by liquid nitrogen to reduce contaminations. The source has been used for the deposition of zirconium, a material that is difficult to evaporate in standard UHV evaporators. At an Ar pressure of 9×10-6 mbar in the UHV chamber and moderate emission current, a highly reproducible deposition rate of ≈1 ML in 250 s was achieved at the substrate (at a distance of ≈50 mm from the target). Higher deposition rates are easily possible. X-ray photoelectron spectroscopy shows a high purity of the deposited films. Depending on the grid voltages, the substrate gets mildly sputtered by Ar+ ions; in addition, the substrate is also reached by electrons from the negatively biased sputter target. © 2017 Author(s)
URI
https://pr.ibs.re.kr/handle/8788114/4131
ISSN
0034-6748
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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