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Te Monolayer-Driven Spontaneous van der Waals Epitaxy of Two-dimensional Pnictogen Chalcogenide Film on Sapphire

DC Field Value Language
dc.contributor.authorJae-Yeol Hwang-
dc.contributor.authorYoung-Min Kim-
dc.contributor.authorKyu Hyoung Lee-
dc.contributor.authorHiromichi Ohta-
dc.contributor.authorSung Wng Kim-
dc.date.available2017-12-08T00:47:23Z-
dc.date.created2017-11-17-
dc.date.issued2017-10-
dc.identifier.issn1530-6984-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/4021-
dc.description.abstractDemands on high-quality layer structured two-dimen sional (2D) thin films such as pnictogen chalcogenides and transition metal dichalcogenides are growing due to the findings of exotic physical properties and potentials for device applications. However, the difficulties in controlling epitaxial growth and the unclear understanding of van der Waals epitaxy (vdWE) for a 2D chalcogenide film on a three-dimensional (3D) substrate have been major obstacles for the further advances of 2D materials. Here, we exploit the spontaneous vdWE of a high-quality 2D chalcogenide (Bi0.5Sb1.5Te3) film by the chalcogen-driven surface reconstruction of a conventional 3D sapphire substrate. It is verified that the in situ formation of a pseudomorphic Te atomic monolayer on the surface of sapphire, which results in a dangling bond-free surface, allows the spontaneous vdWE of 2D chalcogenide film. Since this route uses the natural surface reconstruction of sapphire with chalcogen under vacuum condition, it can be scalable and easily utilized for the developments of various 2D chalcogenide vdWE films through conventional thin-film fabrication technologies. © 2017 American Chemical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.subjectvan der Waals epitaxy-
dc.subjectalpha-Al2O3-
dc.subjectepitaxial films-
dc.subjectpnictogen chalcogenides-
dc.subject2D layered materials-
dc.titleTe Monolayer-Driven Spontaneous van der Waals Epitaxy of Two-dimensional Pnictogen Chalcogenide Film on Sapphire-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000413057500038-
dc.identifier.scopusid2-s2.0-85031294525-
dc.identifier.rimsid60858-
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorYoung-Min Kim-
dc.identifier.doi10.1021/acs.nanolett.7b02737-
dc.identifier.bibliographicCitationNANO LETTERS, v.17, no.10, pp.6140 - 6145-
dc.citation.titleNANO LETTERS-
dc.citation.volume17-
dc.citation.number10-
dc.citation.startPage6140-
dc.citation.endPage6145-
dc.date.scptcdate2018-10-01-
dc.description.wostc2-
dc.description.scptc2-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusALPHA-AL2O3 0001 SURFACE-
dc.subject.keywordPlusTOPOLOGICAL INSULATOR-
dc.subject.keywordPlusMOS2 TRANSISTORS-
dc.subject.keywordPlusLAYER MOS2-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusBI2TE3-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusINTERFACES-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordAuthorvan der Waals epitaxy-
dc.subject.keywordAuthoralpha-Al2O3-
dc.subject.keywordAuthorepitaxial films-
dc.subject.keywordAuthorpnictogen chalcogenides-
dc.subject.keywordAuthor2D layered materials-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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