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Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites

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dc.contributor.authorHyunjin Ji-
dc.contributor.authorMin-Kyu Joo-
dc.contributor.authorHojoon Yi-
dc.contributor.authorHomin Choi-
dc.contributor.authorHamza Zad Gul-
dc.contributor.authorMohan Kumar Ghimire-
dc.contributor.authorSeong Chu Lim-
dc.date.available2017-10-26T00:43:13Z-
dc.date.created2017-09-25-
dc.date.issued2017-08-
dc.identifier.issn1944-8244-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/3941-
dc.description.abstractThere is a general consensus that the carrier mobility in a field-effect transistor (FET) made of semiconducting transition-metal dichalcogenides (s-TMDs) is severely degraded by the trapping/detrapping and Coulomb scattering of carriers by ionic charges in the gate oxides. Using a double-gated (DG) MoTe2 FET, we modulated and enhanced the carrier mobility by adjusting the top- and bottom-gate biases. The relevant mechanism for mobility tuning in this device was explored using static DC and low-frequency (LF) noise characterizations. In the investigations, LF-noise analysis revealed that for a strong back-gate bias the Coulomb scattering of carriers by ionized traps in the gate dielectrics is strongly screened by accumulation charges. This significantly reduces the electrostatic scattering of channel carriers by the interface trap sites, resulting in increased mobility. The reduction of the number of effective trap sites also depends on the gate bias, implying that owing to the gate bias, the carriers are shifted inside the channel. Thus, the number of active trap sites decreases as the carriers are repelled from the interface by the gate bias. The gate-controlled Coulomb-scattering parameter and the trap-site density provide new handles for improving the carrier mobility in TMDs, in a fundamentally different way from dielectric screening observed in previous studies. © 2017 American Chemical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.subjectcarrier distribution-
dc.subjectdouble-gated-
dc.subjectinterface trap density-
dc.subjectinterfacial Coulomb scattering-
dc.subjectmobility modulation-
dc.subjectmolybdenum ditelluride-
dc.titleTunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000409395500114-
dc.identifier.scopusid2-s2.0-85028712196-
dc.identifier.rimsid60322-
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorMin-Kyu Joo-
dc.contributor.affiliatedAuthorHojoon Yi-
dc.contributor.affiliatedAuthorHomin Choi-
dc.contributor.affiliatedAuthorHamza Zad Gul-
dc.contributor.affiliatedAuthorMohan Kumar Ghimire-
dc.contributor.affiliatedAuthorSeong Chu Lim-
dc.identifier.doi10.1021/acsami.7b05865-
dc.identifier.bibliographicCitationACS APPLIED MATERIALS & INTERFACES, v.9, no.34, pp.29185 - 29192-
dc.citation.titleACS APPLIED MATERIALS & INTERFACES-
dc.citation.volume9-
dc.citation.number34-
dc.citation.startPage29185-
dc.citation.endPage29192-
dc.date.scptcdate2018-10-01-
dc.description.wostc3-
dc.description.scptc3-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusLOW-FREQUENCY NOISE-
dc.subject.keywordPlusMULTILAYER MOS2 TRANSISTORS-
dc.subject.keywordPlusHEXAGONAL BORON-NITRIDE-
dc.subject.keywordPlusINTERFACE-TRAP-
dc.subject.keywordPlusCHARGE-DENSITY-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusMOSFETS-
dc.subject.keywordPlusSCATTERING-
dc.subject.keywordPlusCHANNEL-
dc.subject.keywordPlusHETEROSTRUCTURE-
dc.subject.keywordAuthormolybdenum ditelluride-
dc.subject.keywordAuthordouble-gated-
dc.subject.keywordAuthormobility modulation-
dc.subject.keywordAuthorinterface trap density-
dc.subject.keywordAuthorinterfacial Coulomb scattering-
dc.subject.keywordAuthorcarrier distribution-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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