The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties

Cited 2 time in webofscience Cited 0 time in scopus
229 Viewed 99 Downloaded
Title
The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
Author(s)
Jozeph Park; Hyun-Jun Jeong; Hyun-Mo Lee; Ho-Hyun Nahm; Jin-Seong Park
Publication Date
2017-05
Journal
SCIENTIFIC REPORTS, v.7, no.1, pp.2111 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimization of electrical performance and stability of the TFTs via studying the resonant interaction between anions or vacancies in ZnON. It is found that the incorporation of nitrogen increases the concentration of nitrogen vacancies (VN +s), which generate larger concentrations of free electrons with increased mobility. However, a critical amount of nitrogen exists, above which electrically inactive divacancy (VN-VN)0 forms, thus reducing the number of carriers and their mobility. The presence of nitrogen anions also reduces the relative content of oxygen anions, therefore diminishing the probability of forming O-O dimers (peroxides). The latter is well known to accelerate device degradation under NBIS. Calculations indicate that a balance between device performance and NBIS stability may be achieved by optimizing the nitrogen to oxygen anion ratio. Experimental results confirm that the degradation of the TFTs with respect to NBIS becomes less severe as the nitrogen content in the film increases, while the device performance reaches an intermediate peak, with field effect mobility exceeding 50 cm2/Vs. © 2017 The Author(s)
URI
https://pr.ibs.re.kr/handle/8788114/3622
ISSN
2045-2322
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
Files in This Item:
Re 논문 문의.txtDownload

qrcode

  • facebook

    twitter

  • Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
해당 아이템을 이메일로 공유하기 원하시면 인증을 거치시기 바랍니다.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse