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다차원 탄소재료 연구단
다차원 탄소재료 연구단
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Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene

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Title
Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene
Author(s)
Hyo-Ki Hong; Junhyeon Jo; Daeyeon Hwang; Jongyeong Lee; Na Yeon Kim; Seungwoo Son; Jung Hwa Kim; Mi-Jin Jin; Young Chul Jun; Rolf Erni; Sang Kyu Kwak; Jung-Woo Yoo; Zonghoon Lee
Publication Date
2017-01
Journal
NANO LETTERS, v.17, no.1, pp.120 - 127
Publisher
AMER CHEMICAL SOC
Abstract
Atomically thin semiconducting oxide on graphene carries a unique combination of wide band gap, high charge carrier mobility, and optical transparency, which can be widely applied for optoelectronics. However, study on the epitaxial formation and properties of oxide monolayer on graphene remains unexplored due to hydrophobic graphene surface and limits of conventional bulk deposition technique. Here, we report atomic scale study of heteroepitaxial growth and relationship of a single-atom-thick ZnO layer on graphene using atomic layer deposition. We demonstrate atom-by-atom growth of zinc and oxygen at the preferential zigzag edge of a ZnO monolayer on graphene through in situ observation. We experimentally determine that the thinnest ZnO monolayer has a wide band gap (up to 4.0 eV), due to quantum confinement and graphene-like structure, and high optical transparency. This study can lead to a new class of atomically thin two-dimensional heterostructures of semiconducting oxides formed by highly controlled epitaxial growth © 2016 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/3558
ISSN
1530-6984
Appears in Collections:
Center for Multidimensional Carbon Materials(다차원 탄소재료 연구단) > Journal Papers (저널논문)
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