Effect of internal field on the high resistance state retention of unipolar resistance switching in ferroelectric vanadium doped ZnO

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Title
Effect of internal field on the high resistance state retention of unipolar resistance switching in ferroelectric vanadium doped ZnO
Author(s)
Changjin Wu; Yuefa Jia; Yeong Jae Shin; Tae Won Noh; Seung Chul Chae; Chunli Liu
Publication Date
2017-04
Journal
APPLIED PHYSICS LETTERS, v.110, no.14, pp.143502 -
Publisher
AMER INST PHYSICS
Abstract
We report the effect of an internal field on the high resistance state (HRS) retention of unipolar switching in ferroelectric vanadium (V) doped ZnO thin films. ZnO thin films doped with 1%, 3%, and 5% of V were found to have an increased internal field as the V concentration increased. The effect of an internal field on resistance switching was observed from the lower set voltage and shorter high resistance state retention time. A physical model was applied to explain the relationship between the internal field and the HRS retention, and a good agreement was obtained with the experimental data. Our result suggested that the internal field can reduce the activation energy of the redox process for generating oxygen vacancies, which subsequently affect the formation of conducting filaments in the resistance switching process. (c)2017 Author(s)
URI
https://pr.ibs.re.kr/handle/8788114/3544
ISSN
0003-6951
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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