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Heterogeneous stacking of nanodot monolayers by dry pick-and-place transfer and its applications in quantum dot light-emitting diodes

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dc.contributor.authorTae-Ho Kim-
dc.contributor.authorDae-Young Chung-
dc.contributor.authorJiYeon Ku-
dc.contributor.authorInyong Song-
dc.contributor.authorSoohwan Sul-
dc.contributor.authorDae-Hyeong Kim-
dc.contributor.authorKyung-Sang Cho-
dc.contributor.authorByoung Lyong Choi-
dc.contributor.authorJong Min Kim-
dc.contributor.authorSungwoo Hwang-
dc.contributor.authorKinam Kim-
dc.date.available2017-05-19T01:14:00Z-
dc.date.created2017-04-05ko
dc.date.issued2013-11-
dc.identifier.issn2041-1723-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/3518-
dc.description.abstractLayered assembly structures composed of nanomaterials, such as nanocrystals, have attracted considerable attention as promising candidates for new functional devices whose optical, electromagnetic and electronic behaviours are determined by the spatial arrangement of component elements. However, difficulties in handling each constituent layer in a materialspecific manner limit the 3D integration of disparate nanomaterials into the appropriate heterogeneous electronics. Here we report a pick-and-place transfer method that enables the transfer of large-area nanodot assemblies. This solvent-free transfer utilizes a lifting layer and allows for the reliable transfer of a quantum dot (QD) monolayer, enabling layer-by-layer design. With the controlled multistacking of different bandgap QD layers, we are able to probe the interlayer energy transfer among different QD monolayers. By controlling the emission spectrum through such designed monolayer stacking, we have achieved white emission with stable optoelectronic properties, the closest to pure white among the QD lightemitting diodes reported so far. (c) 2013 Macmillan Publishers Limited. All rights reserved.-
dc.description.uri1-
dc.language영어-
dc.publisherNATURE PUBLISHING GROUP-
dc.titleHeterogeneous stacking of nanodot monolayers by dry pick-and-place transfer and its applications in quantum dot light-emitting diodes-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000327948500001-
dc.identifier.scopusid2-s2.0-84890027788-
dc.identifier.rimsid59119ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorDae-Hyeong Kim-
dc.identifier.doi10.1038/ncomms3637-
dc.identifier.bibliographicCitationNATURE COMMUNICATIONS, v.4, pp.2637-
dc.citation.titleNATURE COMMUNICATIONS-
dc.citation.volume4-
dc.citation.startPage2637-
dc.date.scptcdate2018-10-01-
dc.description.wostc40-
dc.description.scptc20-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Appears in Collections:
Center for Nanoparticle Research(나노입자 연구단) > 1. Journal Papers (저널논문)
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