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Observation of Charge Transfer in Heterostructures Composed of MoSe2 Quantum Dots and a Monolayer of MoS2 or WSe2

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dc.contributor.authorShrawan Roy-
dc.contributor.authorGuru P. Neupane-
dc.contributor.authorKrishna P. Dhakal-
dc.contributor.authorJubok Lee-
dc.contributor.authorSeok Joon Yun-
dc.contributor.authorGang Hee Han-
dc.contributor.authorJeongyong Kim-
dc.date.available2017-05-19T01:13:40Z-
dc.date.created2017-03-21-
dc.date.issued2017-01-
dc.identifier.issn1932-7447-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/3502-
dc.description.abstractMonolayer transition metal dichalcogenides (TMDs) are atomically thin semiconductor films that are ideal platforms for the study and engineering of quantum heterostructures for optoelectronic applications. We present a simple method for the fabrication of TMD heterostructures containing MoSe2 quantum dots (QDS) and a MoS2 or WSe2, monolayer. The strong modification of photoluminescence and Raman spectra that includes the quenching of MoSe2 QDs and the varied spectral weights of trions for the MoS2 and WSe2 monolayers were observed, suggesting the charge transfer Occurring in these TMD heterostructures. Such optically active heterostructures, which can be conveniently fabricated by dispersing TMD QDs onto TMD monolayers, are likely to have various nanophotonic applications because of their versatile and controllable properties. © 2017 American Chemical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER CHEMICAL SOC-
dc.titleObservation of Charge Transfer in Heterostructures Composed of MoSe2 Quantum Dots and a Monolayer of MoS2 or WSe2-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000393008900071-
dc.identifier.scopusid2-s2.0-85024368051-
dc.identifier.rimsid58990ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorShrawan Roy-
dc.contributor.affiliatedAuthorGuru P. Neupane-
dc.contributor.affiliatedAuthorKrishna P. Dhakal-
dc.contributor.affiliatedAuthorJubok Lee-
dc.contributor.affiliatedAuthorSeok Joon Yun-
dc.contributor.affiliatedAuthorGang Hee Han-
dc.contributor.affiliatedAuthorJeongyong Kim-
dc.identifier.doi10.1021/acs.jpcc.6b11778-
dc.identifier.bibliographicCitationJOURNAL OF PHYSICAL CHEMISTRY C, v.121, no.3, pp.1997 - 2004-
dc.citation.titleJOURNAL OF PHYSICAL CHEMISTRY C-
dc.citation.volume121-
dc.citation.number3-
dc.citation.startPage1997-
dc.citation.endPage2004-
dc.date.scptcdate2018-10-01-
dc.description.wostc9-
dc.description.scptc11-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusSINGLE-LAYER MOS2-
dc.subject.keywordPlusMETAL DICHALCOGENIDES-
dc.subject.keywordPlusLIGHT-EMISSION-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusEXFOLIATION-
dc.subject.keywordPlusABSORPTION-
dc.subject.keywordPlusNANOSHEETS-
dc.subject.keywordPlusEVOLUTION-
dc.subject.keywordPlusTHICKNESS-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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