Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film
DC Field | Value | Language |
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dc.contributor.author | Eun Sung Kim | - |
dc.contributor.author | Jae-Yeol Hwang | - |
dc.contributor.author | Kyu Hyoung Lee | - |
dc.contributor.author | Hiromichi Ohta | - |
dc.contributor.author | Young Hee Lee | - |
dc.contributor.author | Sung Wng Kim | - |
dc.date.available | 2017-05-19T01:13:01Z | - |
dc.date.created | 2017-04-24 | - |
dc.date.issued | 2017-02 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/3471 | - |
dc.description.abstract | Graphene as a substrate for the van der Waals epitaxy of 2D layered materials is utilized for the epitaxial growth of a layer-structured thermoelectric film. Van der Waals epitaxial Bi0.5Sb1.5Te3 film on graphene synthesized via a simple and scalable fabrication method exhibits good crystallinity and high thermoelectric transport properties comparable to single crystals. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | bismuth antimony telluride | - |
dc.subject | graphene | - |
dc.subject | layered structures | - |
dc.subject | thermoelectrics | - |
dc.subject | van der Waals epitaxy | - |
dc.title | Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000395187900016 | - |
dc.identifier.scopusid | 2-s2.0-85007013480 | - |
dc.identifier.rimsid | 59169 | ko |
dc.date.tcdate | 2018-10-01 | - |
dc.contributor.affiliatedAuthor | Eun Sung Kim | - |
dc.contributor.affiliatedAuthor | Jae-Yeol Hwang | - |
dc.contributor.affiliatedAuthor | Young Hee Lee | - |
dc.identifier.doi | 10.1002/adma.201604899 | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.29, no.8, pp.1604899-1 - 1604899-7 | - |
dc.relation.isPartOf | ADVANCED MATERIALS | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 29 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 1604899-1 | - |
dc.citation.endPage | 1604899-7 | - |
dc.date.scptcdate | 2018-10-01 | - |
dc.description.wostc | 9 | - |
dc.description.scptc | 9 | - |
dc.description.journalClass | 1 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | TOPOLOGICAL INSULATOR | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | NITRIDE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | BI2TE3 | - |
dc.subject.keywordAuthor | bismuth antimony telluride | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | layered structures | - |
dc.subject.keywordAuthor | thermoelectrics | - |
dc.subject.keywordAuthor | van der Waals epitaxy | - |