IBS Publications Repository: Highly oriented SrTiO3 thin film on graphene substrate

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IBS Publications RepositoryCenter for Integrated Nanostructure Physics(나노구조물리 연구단)1. Journal Papers (저널논문)

Highly oriented SrTiO3 thin film on graphene substrate

DC Field	Value	Language
dc.contributor.author	Sang A Lee	-
dc.contributor.author	Jae-Yeol Hwang	-
dc.contributor.author	Eun Sung Kim	-
dc.contributor.author	Sung Wng Kim	-
dc.contributor.author	Woo Seok Choi	-
dc.date.available	2017-05-19T01:12:47Z	-
dc.date.created	2017-02-24	-
dc.date.issued	2017-02	-
dc.identifier.issn	1944-8244	-
dc.identifier.uri	https://pr.ibs.re.kr/handle/8788114/3457	-
dc.description.abstract	Growth of perovskite oxide thin films on Si in crystalline form has long been a critical obstacle for the integration of multifunctional oxides into Si-based technologies. In this study, we propose pulsed laser deposition of a crystalline SrTiO3 thin film on a Si using graphene substrate. The SrTiO3 thin film on graphene has a highly (00l)-oriented crystalline structure which results from the partial epitaxy. Moreover, graphene promotes a sharp interface by highly suppressing the chemical intermixing. The important role of graphene as a 2D substrate and diffusion barrier allows the expansion of device applications based on functional complex oxides. © 2017 American Chemical Society	-
dc.language	영어	-
dc.publisher	AMER CHEMICAL SOC	-
dc.subject	Diffusion barrier	-
dc.subject	Epitaxy	-
dc.subject	Graphene	-
dc.subject	Interface	-
dc.subject	Pulsed laser deposition	-
dc.subject	Si	-
dc.subject	SrTiO3	-
dc.subject	Thin film	-
dc.title	Highly oriented SrTiO3 thin film on graphene substrate	-
dc.type	Article	-
dc.type.rims	ART	-
dc.identifier.wosid	000393355900003	-
dc.identifier.scopusid	2-s2.0-85011673032	-
dc.identifier.rimsid	58855	-
dc.date.tcdate	2018-10-01	-
dc.contributor.affiliatedAuthor	Jae-Yeol Hwang	-
dc.contributor.affiliatedAuthor	Eun Sung Kim	-
dc.identifier.doi	10.1021/acsami.6b12258	-
dc.identifier.bibliographicCitation	ACS APPLIED MATERIALS & INTERFACES, v.9, no.4, pp.3246 - 3250	-
dc.relation.isPartOf	ACS APPLIED MATERIALS & INTERFACES	-
dc.citation.title	ACS APPLIED MATERIALS & INTERFACES	-
dc.citation.volume	9	-
dc.citation.number	4	-
dc.citation.startPage	3246	-
dc.citation.endPage	3250	-
dc.date.scptcdate	2018-10-01	-
dc.description.wostc	2	-
dc.description.scptc	3	-
dc.description.journalClass	1	-
dc.description.journalClass	1	-
dc.description.journalRegisteredClass	scie	-
dc.description.journalRegisteredClass	scopus	-
dc.relation.journalWebOfScienceCategory	Nanoscience & Nanotechnology	-
dc.relation.journalWebOfScienceCategory	Materials Science, Multidisciplinary	-
dc.subject.keywordPlus	DER-WAALS EPITAXY	-
dc.subject.keywordPlus	CRYSTALLINE OXIDES	-
dc.subject.keywordPlus	SILICON	-
dc.subject.keywordPlus	GROWTH	-
dc.subject.keywordPlus	INTERFACE	-
dc.subject.keywordPlus	SURFACE	-
dc.subject.keywordPlus	LAYER	-
dc.subject.keywordPlus	SI	-
dc.subject.keywordPlus	HETEROSTRUCTURES	-
dc.subject.keywordAuthor	SrTiO3	-
dc.subject.keywordAuthor	graphene	-
dc.subject.keywordAuthor	thin film	-
dc.subject.keywordAuthor	pulsed laser deposition	-
dc.subject.keywordAuthor	interface	-
dc.subject.keywordAuthor	epitaxy	-
dc.subject.keywordAuthor	diffusion barrier	-
dc.subject.keywordAuthor	Si	-