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Conductive Graphitic Channel in Graphene Oxide-Based Memristive Devices

Cited 31 time in webofscience Cited 33 time in scopus
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Title
Conductive Graphitic Channel in Graphene Oxide-Based Memristive Devices
Author(s)
Sung Kyu Kim; Jong Yoon Kim; Byung Chul Jang; Mi Sun Cho; Sung‐Yool Choi; Jeong Yong Lee; Hu Young Jeong
Publication Date
2016-11
Journal
ADVANCED FUNCTIONAL MATERIALS, v.26, no.41, pp.7406 - 7414
Publisher
WILEY-V C H VERLAG GMBH
Abstract
Electrically insulating graphene oxide with various oxygen-functional groups is a novel material as an active layer in resistive switching memories via reduction process. Although many research groups have reported on graphene oxide-based resistive switching memories, revealing the origin of conducting path in a graphene oxide active layer remains a critical challenge. Here nanoscale conductive graphitic channels within graphene oxide films are reported using a low-voltage spherical-aberration-corrected transmission electron microscopy. Simultaneously, these channels with reduced graphene oxide nanosheets induced by the detachment of oxygen groups are verified by Raman intensity ratio map and conductive atomic force microscopy. It is also clearly revealed that Al metallic protrusions, which are generated in the bottom interface layer, assist the local formation of conductive graphitic channels directly onto graphene oxide films by generating a local strong electric field. This work provides essential information for future carbon-based nanoelectronic devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
https://pr.ibs.re.kr/handle/8788114/3098
DOI
10.1002/adfm.201602748
ISSN
1616-301X
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > 1. Journal Papers (저널논문)
Files in This Item:
Adv. Funct. Mater. 2016, 26, 7406–7414.pdfDownload

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