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IBS Publications RepositoryCenter for Nanoparticle Research(나노입자 연구단)1. Journal Papers (저널논문)

Colloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory

DC Field Value Language
dc.contributor.authorDonghee Son-
dc.contributor.authorSue In Chae-
dc.contributor.authorMyungbin Kim-
dc.contributor.authorMoon Kee Choi-
dc.contributor.authorJiwoong Yang-
dc.contributor.authorKunsu Park-
dc.contributor.authorVinayak S. Kale-
dc.contributor.authorJa Hoon Koo-
dc.contributor.authorChangsoon Choi-
dc.contributor.authorLee M.-
dc.contributor.authorKim J.H.-
dc.contributor.authorTaeghwan Hyeon-
dc.contributor.authorDae-Hyeong Kim-
dc.date.available2017-01-02T07:09:35Z-
dc.date.created2016-11-23-
dc.date.issued2016-11-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/3096-
dc.description.abstractLarge-scale colloidal synthesis and integration of uniform-sized molybdenum disulfi de (MoS2) nanosheets for a fl exible resistive random access memory (RRAM) array are presented. RRAM using MoS2 nano sheets shows a approximate to 10 000 times higher on/off ratio than that based on exfoliated MoS2. The good uniformity of the MoS2 nanosheets allows wafer-scale system integration of the RRAM array with pressure sensors and quantum-dot light-emitting diodes. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.description.uri1-
dc.language영어-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectcolloidal synthesis-
dc.subjectflexible electronics-
dc.subjectMoS2 nanosheets-
dc.subjectresistive random access memory-
dc.titleColloidal Synthesis of Uniform-Sized Molybdenum Disulfide Nanosheets for Wafer-Scale Flexible Nonvolatile Memory-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000391174600008-
dc.identifier.scopusid2-s2.0-84994268357-
dc.identifier.rimsid57708ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorDonghee Son-
dc.contributor.affiliatedAuthorSue In Chae-
dc.contributor.affiliatedAuthorMyungbin Kim-
dc.contributor.affiliatedAuthorMoon Kee Choi-
dc.contributor.affiliatedAuthorJiwoong Yang-
dc.contributor.affiliatedAuthorKunsu Park-
dc.contributor.affiliatedAuthorVinayak S. Kale-
dc.contributor.affiliatedAuthorJa Hoon Koo-
dc.contributor.affiliatedAuthorChangsoon Choi-
dc.contributor.affiliatedAuthorTaeghwan Hyeon-
dc.contributor.affiliatedAuthorDae-Hyeong Kim-
dc.identifier.doi10.1002/adma.201602391-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.28, no.42, pp.9326 - 9332-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume28-
dc.citation.number42-
dc.citation.startPage9326-
dc.citation.endPage9332-
dc.date.scptcdate2018-10-01-
dc.description.wostc27-
dc.description.scptc26-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordAuthorcolloidal synthesis-
dc.subject.keywordAuthorflexible electronics-
dc.subject.keywordAuthorMoS2 nanosheets-
dc.subject.keywordAuthorresistive random access memory-
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Center for Nanoparticle Research(나노입자 연구단) > 1. Journal Papers (저널논문)
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