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나노물질 및 화학반응 연구단
나노물질 및 화학반응 연구단
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Mn-doped Ge self-assembled quantum dots via dewetting of thin films

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Title
Mn-doped Ge self-assembled quantum dots via dewetting of thin films
Author(s)
Mansour Aouassa; Imen Jadli; Anup Bandyopadhyay; Sung Kyu Kim; Ibrahim Karaman; Jeong Yong Lee
Publication Date
2017-03
Journal
APPLIED SURFACE SCIENCE, v.397, no., pp.40 - 43
Publisher
ELSEVIER SCIENCE BV
Abstract
In this study, we demonstrate an original elaboration route for producing a Mn-doped Ge self-assembled quantum dots on SiO2 thin layer for MOS structure. These magnetic quantum dots are elaborated using dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing at high temperature of an amorphous Ge:Mn (Mn: 40%) nanolayer deposed at very low temperature by high-precision Solid Source Molecular Beam Epitaxy on SiO2 thin film. The size of quantum dots is controlled with nanometer scale precision by varying the nominal thickness of amorphous film initially deposed. The magnetic properties of the quantum-dots layer have been investigated by superconducting quantum interference device (SQUID) magnetometry. Atomic force microscopy (AFM), x-ray energy dispersive spectroscopy (XEDS) and transmission electron microscopy (TEM) were used to examine the nanostructure of these materials. Obtained results indicate that GeMn QDs are crystalline, monodisperse and exhibit a ferromagnetic behavior with a Curie temperature (TC) above room temperature. They could be integrated into spintronic technology. © 2016 Elsevier B.V.
URI
https://pr.ibs.re.kr/handle/8788114/3077
ISSN
0169-4332
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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Applied Surface Science 397 (2017) 40–43.pdfDownload

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