Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors

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Title
Hydrogen Bistability as the Origin of Photo-Bias-Thermal Instabilities in Amorphous Oxide Semiconductors
Author(s)
Youngho Kang; Byung Du Ahn; Ji Hun Song; Yeon Gon Mo; Ho-Hyun Nahm; Seungwu Han; Jae Kyeong Jeong
Publication Date
2015-07
Journal
ADVANCED ELECTRONIC MATERIALS, v.1, no.7, pp.1400006 -
Publisher
WILEY
Abstract
Zinc-based metal oxide semiconductors have attracted attention as an alternative to current silicon-based semiconductors for applications in transparent and flexible electronics. Despite this, metal oxide transistors require significant improvements in performance and electrical reliability before they can be applied widely in optoelectronics. Amorphous indium-zinc-tin oxide (a-IZTO) has been considered an alternative channel layer to a prototypical indium-gallium-zinc oxide (IGZO) with the aim of achieving a high mobility (>40 cm(2) Vs(-1)) transistors. The effects of the gate bias and light stress on the resulting a-IZTO field-effect transistors are examined in detail. Hydrogen impurities in the a-IZTO semiconductor are found to play a direct role in determining the photo-bias stability of the resulting transistors. The Al2O3-inserted IZTO thin-film transistors (TFTs) are hydrogen-poor, and consequently show better resistance to the external-bias-thermal stress and photo-bias-thermal stress than the hydrogen-rich control IZTO TFTs. First-principles calculations show that even in the amorphous phase, hydrogen impurities including interstitial H and substitutional H can be bistable centers with an electronic deep-to-shallow transition through large lattice relaxation. The negative threshold voltage shift of the a-IZTO transistors under a negative-bias-thermal stress and negative-bias-illumination stress condition is attributed to the transition from the acceptor-like deep interstitial H-i (or substitutional H-DX-) to the shallow H-i(+) (or H-O(+)) with a high (low) activation energy barrier. Conclusively, the delicate controllability of hydrogen is a key factor to achieve the high performance and stability of the metal oxide transistors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI
https://pr.ibs.re.kr/handle/8788114/3074
ISSN
2199-160X
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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