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원자제어 저차원 전자계 연구단
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Topological phase transition and quantum spin Hall edge states of antimony few layers

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Title
Topological phase transition and quantum spin Hall edge states of antimony few layers
Author(s)
Sung Hwan Kim; Jin K.-H.; Park J.; Kim J.S.; Jhi S.-H.; Han Woong Yeom
Publication Date
2016-09
Journal
SCIENTIFIC REPORTS, v.6, no., pp.33193 -
Publisher
NATURE PUBLISHING GROUP
Abstract
While two-dimensional (2D) topological insulators (TI's) initiated the field of topological materials, only very few materials were discovered to date and the direct access to their quantum spin Hall edge states has been challenging due to material issues. Here, we introduce a new 2D TI material, Sb few layer films. Electronic structures of ultrathin Sb islands grown on Bi 2 Te 2 Se are investigated by scanning tunneling microscopy. The maps of local density of states clearly identify robust edge electronic states over the thickness of three bilayers in clear contrast to thinner islands. This indicates that topological edge states emerge through a 2D topological phase transition predicted between three and four bilayer films in recent theory. The non-trivial phase transition and edge states are confirmed for epitaxial films by extensive density-functional-theory calculations. This work provides an important material platform to exploit microscopic aspects of the quantum spin Hall phase and its quantum phase transition. © 2016 The Author(s)
URI
http://pr.ibs.re.kr/handle/8788114/3054
DOI
10.1038/srep33193
ISSN
2045-2322
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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