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원자제어 저차원 전자계 연구단
원자제어 저차원 전자계 연구단
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Band-Tail Transport of CuSCN: Origin of Hole Extraction Enhancement in Organic Photovoltaics

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Title
Band-Tail Transport of CuSCN: Origin of Hole Extraction Enhancement in Organic Photovoltaics
Author(s)
Kim M.; Park S.; Jeong J.; Shin D.; Jimin Kim; Sae Hee Ryu; Keun Su Kim; Lee H.; Yi Y.
Publication Date
2016-07
Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, v.7, no.14, pp.2856 - 2861
Publisher
AMER CHEMICAL SOC
Abstract
Copper thiocyanate (CuSCN) is known as a promising hole transport layer in organic photovoltaics (OPVs) due to its good hole conduction and exciton blocking abilities with high transparency. Despite its successful device applications, the origin of its hole extraction enhancement in OPVs has not yet been understood. Here, we investigated the electronic structure of CuSCN and the energy level alignment at the poly(3-hexylthiophene-2,5-diyl) (P3HT)/CuSCN/ITO interfaces using ultraviolet photoelectron spectroscopy. The band-tail states of CuSCN close to the Fermi level (EF) were observed at 0.25 eV below the EF, leading to good hole transport. The CuSCN interlayer significantly reduces the hole transport barrier between ITO and P3HT due to its high work function and band-tail states. The barrier reduction leads to enhanced current density-voltage characteristics of hole-dominated devices. These results provide the origin of hole-extraction enhancement by CuSCN and insights for further application. © 2016 American Chemical Society
URI
https://pr.ibs.re.kr/handle/8788114/2894
ISSN
1948-7185
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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