Strong Coulomb scattering effects on low frequency noise in monolayer WS2 fieldeffecttransistors

Abstract

When atomically thin semiconducting transition metal dichalcogenides are used as a channel material, they are inevitably exposed to supporting substrates. This situation can lead to masking of intrinsic properties by undesired extrinsic doping and/or additional conductance fluctuations from the largely distributed Coulomb impurities at the interface between the channel and the substrate. Here, we report low-frequency noise characteristics in monolayer WS2 field-effect transistors on silicon/silicon-oxide substrate. To mitigate the effect of extrinsic low-frequency noise sources, a nitrogen annealing was carried out to provide better interface quality and to suppress the channel access resistance. The carrier number fluctuation and the correlated mobility fluctuation (CNFCMF) model was better than the sole CNF one to explain our low-frequency noise data, because of the strong Coulomb scattering effect on the effective mobility caused by carrier trapping/detrapping at oxide traps. The temperature-dependent field-effect mobility in the four-probe configuration and the Coulomb scattering parameters are presented to support this strong Coulomb scattering effect on carrier transport in monolayer WS2 field-effect transistor. Published by AIP Publishing.