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나노 구조 물리 연구단
나노구조물리 연구단
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Electrical Transport Properties of Polymorphic MoS2

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dc.contributor.authorJun Suk Kim-
dc.contributor.authorJaesu Kim-
dc.contributor.authorJiong Zhao-
dc.contributor.authorSungho Kim-
dc.contributor.authorJin Hee Lee-
dc.contributor.authorYoungjo Jin-
dc.contributor.authorHomin Choi-
dc.contributor.authorByoung Hee Moon-
dc.contributor.authorJung Jun Bae-
dc.contributor.authorYoung Hee Lee-
dc.contributor.authorSeong Chu Lim-
dc.description.abstractThe engineering of polymorphs in two-dimensional layered materials has recently attracted significant interest. Although the semiconducting (2H) and metallic (1T) phases are known to be stable in thin-film MoTe2, semiconducting 2H-MoS2 is locally converted into metallic 1T-MoS2 through chemical lithiation. In this paper, we describe the observation of the 2H, 1T, and 1T' phases coexisting in Li-treated MoS2, which result in unusual transport phenomena. Although multiphase MoS2 shows no transistor-gating response, the channel resistance decreases in proportion to the temperature, similar to the behavior of a typical semiconductor. Transmission electron microscopy images clearly show that the 1T and 1T' phases are randomly distributed and intervened with 2H-MoS2, which is referred to as the 1T and 1T' puddling phenomenon. The resistance curve fits well with 2D-variable range-hopping transport behavior, where electrons hop over IT domains that are bounded by semiconducting 2H phases. However, near 30 K, electrons hop over charge puddles. The large temperature coefficient of resistance (TCR) of multiphase MoS2, -2.0 x 10(-2) K-1 at 300 K, allows for efficient IR detection at room temperature by means of the photothermal effect © XXXX American Chemical Society-
dc.publisherAMER CHEMICAL SOC-
dc.titleElectrical Transport Properties of Polymorphic MoS2-
dc.subject.keywordmolybdenum disulfide-
dc.subject.keywordphase transition-
dc.subject.keywordLi intercalation-
dc.subject.keywordvariable range-hopping transport-
dc.subject.keywordIR detection-
dc.contributor.affiliatedAuthorJun Suk Kim-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.bibliographicCitationACS NANO, v.10, no.8, pp.7500 - 7506-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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