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나노 구조 물리 연구단
나노구조물리 연구단
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Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio

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dc.contributor.authorQuoc An Vuko
dc.contributor.authorShin Y.S.ko
dc.contributor.authorKim Y.R.ko
dc.contributor.authorVan Luan Nguyenko
dc.contributor.authorKang W.T.ko
dc.contributor.authorHyun Kimko
dc.contributor.authorDinh Hoa Luongko
dc.contributor.authorLee I.M.ko
dc.contributor.authorLee K.ko
dc.contributor.authorKo D.-S.ko
dc.contributor.authorHeo J.ko
dc.contributor.authorPark S.ko
dc.contributor.authorYoung Hee Leeko
dc.contributor.authorYu W.J.ko
dc.date.available2016-10-06T06:35:17Z-
dc.date.created2016-09-20ko
dc.date.issued201609ko
dc.identifier.issn2041-1723ko
dc.identifier.urihttp://pr.ibs.re.kr/handle/8788114/2791ko
dc.description.abstractConcepts of non-volatile memory to replace conventional flash memory have suffered from low material reliability and high off-state current, and the use of a thick, rigid blocking oxide layer in flash memory further restricts vertical scale-up. Here, we report a two-terminal floating gate memory, tunnelling random access memory fabricated by a monolayer MoS2/h-BN/monolayer graphene vertical stack. Our device uses a two-terminal electrode for current flow in the MoS2 channel and simultaneously for charging and discharging the graphene floating gate through the h-BN tunnelling barrier. By effective charge tunnelling through crystalline h-BN layer and storing charges in graphene layer, our memory device demonstrates an ultimately low off-state current of 10-14 A, leading to ultrahigh on/off ratio over 109, about ∼103 times higher than other two-terminal memories. Furthermore, the absence of thick, rigid blocking oxides enables high stretchability (>19%) which is useful for soft electronics. © 2016 The Author(s)ko
dc.languageENGko
dc.publisherNATURE PUBLISHING GROUPko
dc.titleTwo-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratioko
dc.typeARTICLEko
dc.type.rimsAko
dc.identifier.wosid000384973900001ko
dc.identifier.scopusid2-s2.0-84986200936ko
dc.identifier.pid342null
dc.identifier.pid343null
dc.description.wostc31-
dc.date.scptcdate2018-10-01-
dc.identifier.doi10.1038/ncomms12725ko
dc.identifier.bibliographicCitationNATURE COMMUNICATIONS, v.7, no., pp.12725 -ko
dc.date.tcdate2018-10-01-
dc.description.scptc32-
dc.type.docTypeArticle-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > Journal Papers (저널논문)
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Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh onoff ratio_Nature COmm_유우종.pdfDownload

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