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나노물질 및 화학반응 연구단
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Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes

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Title
Hot carrier multiplication on graphene/TiO2 Schottky nanodiodes
Author(s)
Young Keun Lee; Choi, H; Hyunsoo Lee; Changhwan Lee; Choi, JS; Choi, CG; Hwang, E; Jeong Young Park
Publication Date
2016-06
Journal
SCIENTIFIC REPORTS, v.6, no., pp.27549 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Carrier multiplication (i.e. generation of multiple electron-hole pairs from a single high-energy electron, CM) in graphene has been extensively studied both theoretically and experimentally, but direct application of hot carrier multiplication in graphene has not been reported. Here, taking advantage of efficient CM in graphene, we fabricated graphene/TiO2 Schottky nanodiodes and found CM-driven enhancement of quantum efficiency. The unusual photocurrent behavior was observed and directly compared with Fowler's law for photoemission on metals. The Fowler's law exponent for the graphene-based nanodiode is almost twice that of a thin gold film based diode; the graphene-based nanodiode also has a weak dependence on light intensity-both are significant evidence for CM in graphene. Furthermore, doping in graphene significantly modifies the quantum efficiency by changing the Schottky barrier. The CM phenomenon observed on the graphene/TiO2 nanodiodes can lead to intriguing applications of viable graphene-based light harvesting.
URI
http://pr.ibs.re.kr/handle/8788114/2696
DOI
10.1038/srep27549
ISSN
2045-2322
Appears in Collections:
Center for Nanomaterials and Chemical Reactions(나노물질 및 화학반응 연구단) > Journal Papers (저널논문)
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