Electronic structure and insulating gap in epitaxial VO2 polymorphs

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Title
Electronic structure and insulating gap in epitaxial VO2 polymorphs
Author(s)
Shinbuhm Lee; Tricia L. Meyer; Chang Hee Sohn; Donghwa Lee; John Nichols; Dongkyu Lee; Seo S.S.A.; John w. Freeland; Tae Won Noh; Ho Nyung Lee
Publication Date
2015-12
Journal
APL Materials, v.3, no.12, pp.126109 -
Publisher
AMER INST PHYSICS
Abstract
Determining the origin of the insulating gap in the monoclinic V O2(M1) is a long-standing issue. The difficulty of this study arises from the simultaneous occurrence of structural and electronic transitions upon thermal cycling. Here, we compare the electronic structure of the M1 phase with that of single crystalline insulating V O2(A) and V O2(B) thin films to better understand the insulating phase of VO2. As these A and B phases do not undergo a structural transition upon thermal cycling, we comparatively study the origin of the gap opening in the insulating VO2 phases. By x-ray absorption and optical spectroscopy, we find that the shift of unoccupied t2g orbitals away from the Fermi level is a common feature, which plays an important role for the insulating behavior in VO2 polymorphs. The distinct splitting of the half-filled t2g orbital is observed only in the M1 phase, widening the bandgap up to ∼0.6 eV. Our approach of comparing all three insulating VO2 phases provides insight into a better understanding of the electronic structure and the origin of the insulating gap in VO2. © 2015 Author(s)
URI
https://pr.ibs.re.kr/handle/8788114/2693
ISSN
2166-532X
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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