Tunable band gap in epitaxial ferroelectric Ho(Mn,Ga)O3 films

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Title
Tunable band gap in epitaxial ferroelectric Ho(Mn,Ga)O3 films
Author(s)
Daesu Lee; Choi W.S.; Tae Won Noh
Publication Date
2016-05
Journal
APPLIED PHYSICS LETTERS, v.108, no.19, pp.192901 -
Publisher
AMER INST PHYSICS
Abstract
Ferroelectrics have recently attracted attention as a new class of materials for use in optical and photovoltaic devices. We studied the electronic properties in epitaxially stabilized ferroelectric hexagonal Ho(Mn1- xGax)O3 (x = 0, 0.33, 0.67, and 1) thin films. Our films exhibited systematic changes in electronic structures, such as bandgap and optical transitions, according to the Ga concentration. In particular, the bandgap increased systematically from 1.4 to 3.2 eV, including the visible light region, with increasing Ga concentration from x = 0 to 1. These systematic changes, attributed to lattice parameter variations in epitaxial Ho(Mn1- xGax)O3 films, should prove useful for the design of optoelectronic devices based on ferroelectrics. © 2016 Author(s)
URI
https://pr.ibs.re.kr/handle/8788114/2673
ISSN
0003-6951
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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