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Selective Amplification of the Primary Exciton in a MoS2 Monolayer

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dc.contributor.authorHyun Seok Lee-
dc.contributor.authorMin Su Kim-
dc.contributor.authorYoungjo Jin-
dc.contributor.authorGang Hee Han-
dc.contributor.authorYoung Hee Lee-
dc.contributor.authorJeongyong Kim-
dc.date.available2016-06-22T08:13:58Z-
dc.date.created2016-01-22ko
dc.date.issued2015-11-
dc.identifier.issn0031-9007-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/2562-
dc.description.abstractOptoelectronics applications for transition-metal dichalcogenides are still limited by weak light absorption and their complex exciton modes are easily perturbed by varying excitation conditions because they are inherent in atomically thin layers. Here, we propose a method of selectively amplifying the primary exciton (A(0)) among the exciton complexes in monolayer MoS2 via cyclic reexcitation of cavity-free exciton-coupled plasmon propagation. This was implemented by partially overlapping a Ag nanowire on a MoS2 monolayer separated by a thin SiO2 spacer. Exciton-coupled plasmons in the nanowire enhance the A(0) radiation in MoS2. The cumulative amplification of emission enhancement by cyclic plasmon traveling reaches approximately twentyfold selectively for the A(0), while excluding other B exciton and multiexciton by significantly reduced band filling, without oscillatory spectra implying plasmonic cavity effects. © 2015 American Physical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER PHYSICAL SOC-
dc.titleSelective Amplification of the Primary Exciton in a MoS2 Monolayer-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000365525400018-
dc.identifier.scopusid2-s2.0-84949658747-
dc.identifier.rimsid22114ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorHyun Seok Lee-
dc.contributor.affiliatedAuthorMin Su Kim-
dc.contributor.affiliatedAuthorYoungjo Jin-
dc.contributor.affiliatedAuthorGang Hee Han-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.contributor.affiliatedAuthorJeongyong Kim-
dc.identifier.doi10.1103/PhysRevLett.115.226801-
dc.identifier.bibliographicCitationPHYSICAL REVIEW LETTERS, v.115, no.22, pp.226801-
dc.citation.titlePHYSICAL REVIEW LETTERS-
dc.citation.volume115-
dc.citation.number22-
dc.citation.startPage226801-
dc.date.scptcdate2018-10-01-
dc.description.wostc19-
dc.description.scptc17-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusELECTRICAL CONTROL-
dc.subject.keywordPlusSURFACE-PLASMONS-
dc.subject.keywordPlusATOMIC LAYERS-
dc.subject.keywordPlusNANOWIRES-
dc.subject.keywordPlusSEMICONDUCTOR-
dc.subject.keywordPlusLIGHT-
dc.subject.keywordPlusPROPAGATION-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusLIFETIMES-
dc.subject.keywordPlusTHICKNESS-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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Selective Amplification(2015)PhysRevLett 115 226801(2015)_이현석박사.pdfDownload

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