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Topological fate of edge states of single Bi bilayer on Bi(111)

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Title
Topological fate of edge states of single Bi bilayer on Bi(111)
Author(s)
Han Woong Yeom; Jin K.-H.; Jhi S.-H.
Publication Date
2016-02
Journal
PHYSICAL REVIEW B, v.93, no.7, pp.075435 -
Publisher
AMER PHYSICAL SOC
Abstract
We address the topological nature of electronic states of step edges of Bi(111) films by first-principles band structure calculations. We confirm that the dispersion of step-edge states reflects the topological nature of underlying films, which become topologically trivial at a thickness larger than eight bilayers. This result clearly conflicts with recent claims that the step-edge state at the surface of a bulk Bi(111) crystal or a sufficiently thick Bi(111) film represents nontrivial edge states of the two-dimensional topological insulator phase expected for a very thin Bi(111) film. The trivial step-edge states have a gigantic spin splitting of one-dimensional Rashba bands and substantial intermixing with electronic states of the bulk, which might be exploited further. © 2016 American Physical Society
URI
http://pr.ibs.re.kr/handle/8788114/2471
DOI
10.1103/PhysRevB.93.075435
ISSN
1098-0121
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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