Topological fate of edge states of single Bi bilayer on Bi(111)
DC Field | Value | Language |
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dc.contributor.author | Han Woong Yeom | - |
dc.contributor.author | Jin K.-H. | - |
dc.contributor.author | Jhi S.-H. | - |
dc.date.accessioned | 2016-04-25T02:35:59Z | - |
dc.date.available | 2016-04-25T02:35:59Z | - |
dc.date.created | 2016-04-18 | - |
dc.date.issued | 2016-02 | - |
dc.identifier.issn | 2469-9950 | - |
dc.identifier.uri | https://pr.ibs.re.kr/handle/8788114/2471 | - |
dc.description.abstract | We address the topological nature of electronic states of step edges of Bi(111) films by first-principles band structure calculations. We confirm that the dispersion of step-edge states reflects the topological nature of underlying films, which become topologically trivial at a thickness larger than eight bilayers. This result clearly conflicts with recent claims that the step-edge state at the surface of a bulk Bi(111) crystal or a sufficiently thick Bi(111) film represents nontrivial edge states of the two-dimensional topological insulator phase expected for a very thin Bi(111) film. The trivial step-edge states have a gigantic spin splitting of one-dimensional Rashba bands and substantial intermixing with electronic states of the bulk, which might be exploited further. © 2016 American Physical Society | - |
dc.description.uri | 1 | - |
dc.language | 영어 | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Topological fate of edge states of single Bi bilayer on Bi(111) | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.identifier.wosid | 000370841200003 | - |
dc.identifier.scopusid | 2-s2.0-84960154368 | - |
dc.identifier.rimsid | 55142 | - |
dc.date.tcdate | 2018-10-01 | - |
dc.contributor.affiliatedAuthor | Han Woong Yeom | - |
dc.identifier.doi | 10.1103/PhysRevB.93.075435 | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW B, v.93, no.7, pp.075435 | - |
dc.citation.title | PHYSICAL REVIEW B | - |
dc.citation.volume | 93 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 075435 | - |
dc.date.scptcdate | 2018-10-01 | - |
dc.description.wostc | 8 | - |
dc.description.scptc | 8 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |