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강상관계물질연구단
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Thickness-dependent electronic structure in ultrathin LaNiO3 films under tensile strain

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dc.contributor.authorHyang Keun Yoo-
dc.contributor.authorSeung Ill Hyun-
dc.contributor.authorYoung Jun Chang-
dc.contributor.authorLuca Moreschini-
dc.contributor.authorChang Hee Sohn-
dc.contributor.authorHyeong-Do Kim-
dc.contributor.authorAaron Bostwick-
dc.contributor.authorEli Rotenberg-
dc.contributor.authorJi Hoon Shim-
dc.contributor.authorTae Won Noh-
dc.date.available2016-02-11T01:23:18Z-
dc.date.created2016-01-07-
dc.date.issued2016-01-
dc.identifier.issn2469-9950-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/2384-
dc.description.abstractWe investigated electronic-structure changes of tensile-strained ultrathin LaNiO3 (LNO) films from ten to one unit cells (UCs) using angle-resolved photoemission spectroscopy (ARPES). We found that there is a critical thickness tc between four and three UCs below which Ni eg electrons are confined in two-dimensional space. Furthermore, the Fermi surfaces (FSs) of LNO films below tc consist of two orthogonal pairs of one-dimensional (1D) straight parallel lines. Such a feature is not accidental as observed in constant-energy surfaces at all binding energies, which is not explained by first-principles calculations or the dynamical mean-field theory. The ARPES spectra also show anomalous spectral behaviors, such as no quasiparticle peak at the Fermi momentum but fast band dispersion comparable to the bare-band one, which is typical in a 1D system. As its possible origin, we propose 1D FS nesting, which also accounts for FS superstructures observed in ARPES. ©2016 American Physical Society-
dc.description.uri1-
dc.language영어-
dc.publisherAMER PHYSICAL SOC-
dc.titleThickness-dependent electronic structure in ultrathin LaNiO3 films under tensile strain-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000369221300002-
dc.identifier.scopusid2-s2.0-85000347753-
dc.identifier.rimsid21924ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorHyang Keun Yoo-
dc.contributor.affiliatedAuthorChang Hee Sohn-
dc.contributor.affiliatedAuthorHyeong-Do Kim-
dc.contributor.affiliatedAuthorTae Won Noh-
dc.identifier.doi10.1103/PhysRevB.93.035141-
dc.identifier.bibliographicCitationPHYSICAL REVIEW B, v.93, no.3, pp.035141-
dc.citation.titlePHYSICAL REVIEW B-
dc.citation.volume93-
dc.citation.number3-
dc.citation.startPage035141-
dc.date.scptcdate2018-10-01-
dc.description.wostc11-
dc.description.scptc12-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > 1. Journal Papers (저널논문)
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