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Synthesis of large-area multilayer hexagonal boron nitride for high material performanceHighly Cited Paper

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dc.contributor.authorKim, S.M.-
dc.contributor.authorHsu, A.-
dc.contributor.authorPark, M.H.-
dc.contributor.authorSang Hoon Chae-
dc.contributor.authorSeok Joon Yun-
dc.contributor.authorLee, J.S.-
dc.contributor.authorCho, D.-H.-
dc.contributor.authorFang, W.-
dc.contributor.authorLee, C.-
dc.contributor.authorPalacios, T.-
dc.contributor.authorDresselhaus, M.-
dc.contributor.authorKim, K.K.-
dc.contributor.authorYoung Hee Lee-
dc.contributor.authorKong, J.-
dc.date.available2016-01-25T00:12:54Z-
dc.date.created2015-11-16ko
dc.date.issued2015-10-
dc.identifier.issn2041-1723-
dc.identifier.urihttps://pr.ibs.re.kr/handle/8788114/2316-
dc.description.abstractAlthough hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16±0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼24,000 cm2 V-1 s-1 at room temperature, higher than that (∼13,0002V-1s-1) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times. © 2015 Macmillan Publishers Limited. All rights reserved-
dc.description.uri1-
dc.language영어-
dc.publisherNATURE PUBLISHING GROUP-
dc.titleSynthesis of large-area multilayer hexagonal boron nitride for high material performance-
dc.typeArticle-
dc.type.rimsART-
dc.identifier.wosid000364936200004-
dc.identifier.scopusid2-s2.0-84945941542-
dc.identifier.rimsid21588ko
dc.date.tcdate2018-10-01-
dc.contributor.affiliatedAuthorSang Hoon Chae-
dc.contributor.affiliatedAuthorSeok Joon Yun-
dc.contributor.affiliatedAuthorYoung Hee Lee-
dc.identifier.doi10.1038/ncomms9662-
dc.identifier.bibliographicCitationNATURE COMMUNICATIONS, v.6, pp.8662-
dc.citation.titleNATURE COMMUNICATIONS-
dc.citation.volume6-
dc.citation.startPage8662-
dc.date.scptcdate2018-10-01-
dc.description.wostc97-
dc.description.scptc67-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusWAFER-SCALE-
dc.subject.keywordPlusGRAPHENE HETEROSTRUCTURES-
dc.subject.keywordPlusMONOLAYER MOS2-
dc.subject.keywordPlusLAYER MOS2-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusNI(111)-
dc.subject.keywordPlusDEVICES-
Appears in Collections:
Center for Integrated Nanostructure Physics(나노구조물리 연구단) > 1. Journal Papers (저널논문)
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