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원자제어 저차원 전자계 연구단
원자제어 저차원 전자계 연구단
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Ultra-high modulation depth exceeding 2,400% in optically controlled topological surface plasmons

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Title
Ultra-high modulation depth exceeding 2,400% in optically controlled topological surface plasmons
Author(s)
Sim, S.; Jang, H.; Koirala, N.; Brahlek, M.; Moon, J.; Ji Ho Sung; Park, J.; Cha, S.; Oh, S.; Moon-Ho Jo; Ahn, J.-H.; Choi, H.
Publication Date
2015-10
Journal
NATURE COMMUNICATIONS, v.6, no., pp.8814 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Modulating light via coherent charge oscillations in solids is the subject of intense research topics in opto-plasmonics. Although a variety of methods are proposed to increase such modulation efficiency, one central challenge is to achieve a high modulation depth (defined by a ratio of extinction with/without light) under small photon-flux injection, which becomes a fundamental trade-off issue both in metals and semiconductors. Here, by fabricating simple micro-ribbon arrays of topological insulator Bi 2 Se 3, we report an unprecedentedly large modulation depth of 2,400% at 1.5THz with very low optical fluence of 45μJcm-'2. This was possible, first because the extinction spectrum is nearly zero due to the Fano-like plasmon-phonon-destructive interference, thereby contributing an extremely small denominator to the extinction ratio. Second, the numerator of the extinction ratio is markedly increased due to the photoinduced formation of massive two-dimensional electron gas below the topological surface states, which is another contributor to the ultra-high modulation depth. © 2015 Macmillan Publishers Limited. All rights reserved
URI
http://pr.ibs.re.kr/handle/8788114/2282
DOI
10.1038/ncomms9814
ISSN
2041-1723
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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