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원자제어 저차원 전자계 연구단
원자제어 저차원 전자계 연구단
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Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistor

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Title
Schottky barrier contrasts in single and bi-layer graphene contacts for MoS2 field-effect transistor
Author(s)
Hyewon Du; Taekwang Kim; Somyeong Shin; Dahye Kim; Hakseong Kim; Ji Ho Sung; Myoung Jae Lee; David H Seo; Sang Wook Lee; Moon-Ho Jo; Sunae Seo
Publication Date
2015-12
Journal
APPLIED PHYSICS LETTERS, v.107, no., pp.233106 -
Publisher
AMER INST PHYSICS
Abstract
We have investigated single- and bi-layer graphene as source-drain electrodes for n-type MoS2 transistors. Ti-MoS2-graphene heterojunction transistors using both single-layer MoS2 (1M) and 4-layer MoS2 (4M) were fabricated in order to compare graphene electrodes with commonly used Ti electrodes. MoS2-graphene Schottky barrier provided electron injection efficiency up to 130 times higher in the subthreshold regime when compared with MoS2-Ti, which resulted in VDS polarity dependence of device parameters such as threshold voltage (VTH) and subthreshold swing (SS). Comparing single-layer graphene (SG) with bi-layer graphene (BG) in 4M devices, SG electrodes exhibited enhanced device performance with higher on/off ratio and increased field-effect mobility (FE) due to more sensitive Fermi level shift by gate voltage. Meanwhile, in the strongly accumulated regime, we observed opposing behavior depending on MoS2 thickness for both SG and BG contacts. Differential conductance (rd) of 1M increases with VDS irrespective of VDS polarity, while rd of 4M ceases monotonic growth at positive VDS values transitioning to ohmic-like contact formation. Nevertheless, the low absolute value of rd saturation of the 4M-graphene junction demonstrates that graphene electrode could be unfavorable for high current carrying transistors. (C) 2015 AIP Publishing LLC.
URI
http://pr.ibs.re.kr/handle/8788114/2230
DOI
10.1063/1.4937266
ISSN
0003-6951
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
Files in This Item:
APL_성지호, 조문호 공동저자.pdfDownload

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