Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4

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Title
Undercoordinated indium as an intrinsic electron-trap center in amorphous InGaZnO4
Author(s)
Ho-Hyun Nahm; Yong-Sung Kim
Publication Date
2014-11
Journal
NPG ASIA MATERIALS, v.6, no.11, pp.e143 -
Publisher
NATURE PUBLISHING GROUP
Abstract
Undercoordinated indium (In∗) is found to be an intrinsic defect that acts as a strong electron trap in amorphous InGaZnO4. Conduction electrons couple with the under-coordinated In∗ via Coulomb attraction, which is the driving force for the formation of an In∗-M (M=In, Ga, or Zn) bond. The new structure is stable in the electron-trapped (2-) charge state, and we designate it as an intrinsic (In∗-M)2- center in amorphous InGaZnO4. The (In∗-M)2- centers are preferentially formed in heavily n-doped samples, resulting in a doping limit. They are also formed by electrical/optical stresses, which generate excited electrons, resulting in a metastable change in their electrical properties. © 2014 Nature Publishing Group All rights reserved
URI
https://pr.ibs.re.kr/handle/8788114/2182
ISSN
1884-4049
Appears in Collections:
Center for Correlated Electron Systems(강상관계 물질 연구단) > Journal Papers (저널논문)
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