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Interlayer orientation-dependent light absorption and emission in monolayer semiconductor stacks

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Title
Interlayer orientation-dependent light absorption and emission in monolayer semiconductor stacks
Author(s)
Hoseok Heo; Ji Ho Sung; Cha S.; Jang B.-G.; Kim J.-Y.; Gangtae Jin; Donghun Lee; Ji-Hoon Ahn; Myoung J. Lee; Ji H. Shim; Hyunyong Choi; Moon-Ho Jo
Publication Date
2015-06
Journal
NATURE COMMUNICATIONS, v.6, pp.7372
Publisher
NATURE PUBLISHING GROUP
Abstract
Two-dimensional stacks of dissimilar hexagonal monolayers exhibit unusual electronic, photonic and photovoltaic responses that arise from substantial interlayer excitations. Interband excitation phenomena in individual hexagonal monolayer occur in states at band edges (valleys) in the hexagonal momentum space; therefore, low-energy interlayer excitation in the hexagonal monolayer stacks can be directed by the two-dimensional rotational degree of each monolayer crystal. However, this rotation-dependent excitation is largely unknown, due to lack in control over the relative monolayer rotations, thereby leading to momentum-mismatched interlayer excitations. Here, we report that light absorption and emission in MoS 2/WS 2 monolayer stacks can be tunable from indirect-to direct-gap transitions in both spectral and dynamic characteristics, when the constituent monolayer crystals are coherently stacked without in-plane rotation misfit. Our study suggests that the interlayer rotational attributes determine tunable interlayer excitation as a new set of basis for investigating optical phenomena in a two-dimensional hexagonal monolayer system. © 2015 Macmillan Publishers Limited
URI
https://pr.ibs.re.kr/handle/8788114/2010
DOI
10.1038/ncomms8372
ISSN
2041-1723
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > 1. Journal Papers (저널논문)
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