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원자제어 저차원 전자계 연구단
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Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus Highly Cited Paper

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Title
Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus
Author(s)
Kim J.; Baik S.S.; Sae Hee Ryu; Yeongsup Sohn; Park S.; Park B.-G.; Denlinger J.; Yi Y.; Choi H.J.; Keun Su Kim
Publication Date
2015-08
Journal
SCIENCE, v.349, no.6249, pp.723 - 726
Publisher
AMER ASSOC ADVANCEMENT SCIENCE
Abstract
Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable band gap in few-layer black phosphorus doped with potassium using an in situ surface doping technique. Through band structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulates the band gap, owing to the giant Stark effect, and tunes the material from a moderate-gap semiconductor to a band-inverted semimetal. At the critical field of this band inversion, the material becomes a Dirac semimetal with anisotropic dispersion, linear in armchair and quadratic in zigzag directions. The tunable band structure of black phosphorus may allow great flexibility in design and optimization of electronic and optoelectronic devices. © 2015, American Association for the Advancement of Science. All rights reserved
URI
https://pr.ibs.re.kr/handle/8788114/1945
ISSN
0036-8075
Appears in Collections:
Center for Artificial Low Dimensional Electronic Systems(원자제어 저차원 전자계 연구단) > Journal Papers (저널논문)
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